SCHEMBL1896552

SCHEMBL1896552

C=Cc1ccccc1C(=O)OC(C)OCC(C)C

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.46
TSHR P16473 4/20 0.46
CYP3A4 P08684 1/20 0.36
ADRB2 P07550 4/20 0.36
ADRB1 P08588 4/20 0.36
ADRB3 P13945 4/20 0.36
KMT2A Q03164 2/20 0.34
MAPT P10636 2/20 0.34
MEN1 O00255 1/20 0.34
TP53 P04637 1/20 0.34
NPY1R P25929 1/20 0.34
NPY2R P49146 1/20 0.34
ATM Q13315 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
HTT P42858 2/20 0.34
NPC1 O15118 2/20 0.34
BACE1 P56817 1/20 0.33
SCN1A P35498 1/20 0.33
SCN2A Q99250 1/20 0.33
SCN3A Q9NY46 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1897725 0.87 TSHR (0.40) ALDH1A1TSHRCYP3A4ADRB2ADRB1
SCHEMBL1902387 0.85 ALDH1A1 (0.43) ALDH1A1TSHRCYP3A4ADRB2ADRB1
SCHEMBL1899451 0.83 TSHR (0.46) ALDH1A1TSHRCYP3A4KMT2AMAPT
SCHEMBL4903411 0.82 ALDH1A1 (0.70) ALDH1A1TSHRCYP3A4ADRB2ADRB1
SCHEMBL1895797 0.82 NPC1 (0.37) ALDH1A1TSHRCYP3A4ADRB2ADRB1
SCHEMBL1897705 0.81 NPC1 (0.39) ALDH1A1TSHRCYP3A4ADRB2ADRB1
SCHEMBL820636 0.81 NPC1 (0.50) ALDH1A1TSHRCYP3A4KMT2AMEN1
SCHEMBL29030417 0.81 ALDH1A1 (0.40) ALDH1A1TSHRCYP3A4ADRB2ADRB1
SCHEMBL1897090 0.80 ALDH1A1 (0.39) ALDH1A1TSHRCYP3A4ADRB2ADRB1
SCHEMBL1899421 0.79 NPC1 (0.35) ALDH1A1TSHRCYP3A4ADRB2ADRB1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed