SCHEMBL1895797

SCHEMBL1895797

C=Cc1ccccc1C(=O)OC(C)OC

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 1/20 0.37
TSHR P16473 3/20 0.37
ALDH1A1 P00352 3/20 0.37
KDM4E B2RXH2 1/20 0.37
POLB P06746 1/20 0.37
ATM Q13315 1/20 0.37
CYP3A4 P08684 1/20 0.37
BACE1 P56817 1/20 0.35
LMNA P02545 2/20 0.35
CFTR P13569 1/20 0.34
HSD17B10 Q99714 1/20 0.34
USP2 O75604 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
ADRB2 P07550 1/20 0.33
ADRB1 P08588 1/20 0.33
ADRB3 P13945 1/20 0.33
KMT2A Q03164 1/20 0.33
DHODH Q02127 1/20 0.33
SCN1A P35498 1/20 0.33
SCN2A Q99250 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1897705 0.86 NPC1 (0.39) NPC1TSHRALDH1A1KDM4ECYP3A4
SCHEMBL29030417 0.85 ALDH1A1 (0.40) NPC1TSHRALDH1A1KDM4ECYP3A4
SCHEMBL820636 0.85 NPC1 (0.50) NPC1TSHRALDH1A1KDM4ECYP3A4
SCHEMBL1899421 0.84 NPC1 (0.35) NPC1TSHRALDH1A1CYP3A4LMNA
SCHEMBL1897725 0.84 TSHR (0.40) NPC1TSHRALDH1A1KDM4EPOLB
SCHEMBL5050121 0.83 TSHR (0.50) NPC1TSHRALDH1A1KDM4EPOLB
SCHEMBL1896072 0.83 NPC1 (0.38) NPC1TSHRALDH1A1CYP3A4BACE1
SCHEMBL1896552 0.82 ALDH1A1 (0.46) NPC1TSHRALDH1A1KDM4EATM
SCHEMBL1902387 0.81 ALDH1A1 (0.43) NPC1TSHRALDH1A1KDM4ECYP3A4
SCHEMBL21112027 0.81 TSHR (0.42) TSHRALDH1A1KDM4ECYP3A4BACE1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US claimed
US-20110198730-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION 2011-08-18 US disclosed
US-20110101503-A1 HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD LION CORPORATION (JP) 2011-05-05 US disclosed
US-20080160449-A1 Photoresist polymer having nano-smoothness and etching resistance, and resist composition LION CORPORATION (JP) 2008-07-03 US disclosed