Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DRD2 | P14416 | 3/20 | 0.41 |
| ▸ | DRD1 | P21728 | 3/20 | 0.41 |
| ▸ | DRD4 | P21917 | 3/20 | 0.41 |
| ▸ | DRD5 | P21918 | 3/20 | 0.41 |
| ▸ | DRD3 | P35462 | 3/20 | 0.41 |
| ▸ | MEN1 | O00255 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
| ▸ | PIK3CD | O00329 | 1/20 | 0.38 |
| ▸ | PIK3CA | P42336 | 1/20 | 0.38 |
| ▸ | PIK3CB | P42338 | 1/20 | 0.38 |
| ▸ | CASP1 | P29466 | 2/20 | 0.37 |
| ▸ | LMNA | P02545 | 2/20 | 0.35 |
| ▸ | HTT | P42858 | 1/20 | 0.35 |
| ▸ | CA1 | P00915 | 2/20 | 0.34 |
| ▸ | CA2 | P00918 | 2/20 | 0.34 |
| ▸ | KIF11 | P52732 | 1/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2887915 | 0.89 | DRD2 (0.45) | DRD2DRD1DRD4DRD5DRD3 | |
| Diphenylsulfane SCHEMBL1772327 | 0.85 | PIK3CD (0.45) | PIK3CDPIK3CAPIK3CBCA1CA2 | |
| Diphenylsulfane SCHEMBL4999406 | 0.84 | MMP8 (0.46) | MEN1KMT2APIK3CDPIK3CAPIK3CB | |
| SCHEMBL2572784 | 0.84 | STS (0.45) | PIK3CDPIK3CAPIK3CBCA1CA2 | |
| Diphenylsulfane SCHEMBL6501320 | 0.84 | STS (0.45) | PIK3CDPIK3CAPIK3CBCA1CA2 | |
| Diphenylsulfane SCHEMBL4990263 | 0.80 | PIK3CD (0.42) | PIK3CDPIK3CAPIK3CBCA1CA2 | |
| SCHEMBL3754195 | 0.80 | DRD2 (0.46) | DRD2DRD1DRD4DRD5DRD3 | |
| Diphenylsulfane SCHEMBL2902245 | 0.79 | PIK3CD (0.41) | MEN1KMT2APIK3CDPIK3CAPIK3CB | |
| Diphenylsulfane SCHEMBL4999052 | 0.79 | PIK3CD (0.41) | MEN1KMT2APIK3CDPIK3CAPIK3CB | |
| Diphenylsulfane SCHEMBL18863901 | 0.79 | PIK3CD (0.41) | MEN1KMT2APIK3CDPIK3CAPIK3CB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8697344-B2 | Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern | JSR CORPORATION (JP) | 2014-04-15 | — | — | US | disclosed |
| US-20130216961-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN | JSR CORPORATION (JP) | 2013-08-22 | — | — | US | disclosed |
| US-8507189-B2 | Upper layer film forming composition and method of forming photoresist pattern | JSR CORPORATION (JP) | 2013-08-13 | — | — | US | disclosed |
| US-8431332-B2 | Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern | JSR CORPORATION (JP) | 2013-04-30 | — | — | US | disclosed |
| US-20120183902-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2012-07-19 | — | — | US | disclosed |
| EP-2078983-B1 | COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN | JSR CORP (JP) | 2012-01-04 | — | — | EP | disclosed |
| US-20100255416-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN | JSR CORPORATION (JP) | 2010-10-07 | — | — | US | disclosed |
| US-20100040974-A1 | UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN | JSR CORPORATION (JP) | 2010-02-18 | — | — | US | disclosed |
| EP-2078983-A1 | COMPOSITION FOR FORMATION OF UPPER LAYER FILM, AND METHOD FOR FORMATION OF PHOTORESIST PATTERN | JSR Corporation (JP) | 2009-07-15 | — | — | EP | disclosed |
| US-7371503-B2 | Sulfonium salt compound, photoacid generator, and positive-tone radiation-sensitive resin composition | JSR CORPORATION (JP) | 2008-05-13 | — | — | US | disclosed |
| US-20060141383-A1 | Sulfonium salts, radiation- sensitive acid generators, and positive radiator-sensitive resin compositions | JSR CORPORATION (JP) | 2006-06-29 | — | — | US | disclosed |