Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GRIN2D | O15399 | 4/20 | 0.48 |
| ▸ | GRIN3B | O60391 | 4/20 | 0.48 |
| ▸ | GRIN1 | Q05586 | 4/20 | 0.48 |
| ▸ | GRIN2A | Q12879 | 4/20 | 0.48 |
| ▸ | GRIN2B | Q13224 | 4/20 | 0.48 |
| ▸ | GRIN2C | Q14957 | 4/20 | 0.48 |
| ▸ | GRIN3A | Q8TCU5 | 4/20 | 0.48 |
| ▸ | CA12 | O43570 | 2/20 | 0.47 |
| ▸ | CA1 | P00915 | 2/20 | 0.47 |
| ▸ | CA2 | P00918 | 2/20 | 0.47 |
| ▸ | CA9 | Q16790 | 2/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.46 |
| ▸ | MEN1 | O00255 | 5/20 | 0.43 |
| ▸ | KMT2A | Q03164 | 5/20 | 0.43 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.43 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.38 |
| ▸ | MAPT | P10636 | 1/20 | 0.37 |
| ▸ | ATM | Q13315 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13094610 | 0.81 | CA12 (0.41) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL16449039 | 0.81 | SCN9A (0.40) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL12594442 | 0.80 | GRIN2D (0.50) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL3913348 | 0.80 | ALDH1A1 (0.47) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL20620827 | 0.80 | MEN1 (0.35) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL20817188 | 0.80 | ALDH1A1 (0.33) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL19628848 | 0.78 | GRIN2D (0.55) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL5095244 | 0.78 | GRIN2D (0.50) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL13556201 | 0.77 | ALDH1A1 (0.32) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B | |
| SCHEMBL92293 | 0.75 | ALDH1A1 (0.47) | GRIN2DGRIN3BGRIN1GRIN2AGRIN2B |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 65 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230350296-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230266666-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-08-24 | — | — | US | disclosed |
| EP-4219477-A1 | CYANOTRIAZOLE COMPOUNDS | Otsuka Pharmaceutical Co., Ltd. (JP) | 2023-08-02 | — | — | EP | disclosed |
| CN-115718406-A | Photosensitive resin composition for forming resist, resin film, cured film, and semiconductor device | 住友电木株式会社 | 2023-02-28 | — | — | CN | disclosed |
| CN-110088680-B | Double-layer photosensitive layer roll | 旭化成株式会社 | 2022-12-30 | — | — | CN | disclosed |
| CN-115185157-A | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2022-10-14 | — | — | CN | disclosed |
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-04 | — | — | US | disclosed |
| CN-109153841-B | Resin composition | 东丽株式会社 | 2021-12-31 | — | — | CN | disclosed |
| CN-113820920-A | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2021-12-21 | — | — | CN | disclosed |
| WO-2005118656-A2 | PHOTORESISTS COMPRISING POLYMERS DERIVED FROM FLUOROALCOHOL-SUBSTITUTED POLYCYCLIC MONOMERS | E.I. DUPONT DE NEMOURS AND COMPANY (US) | 2005-12-15 | — | — | WO | disclosed |
| EP-1602011-A2 | PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY | AZ Electronic Materials USA Corp. (US) | 2005-12-07 | — | — | EP | disclosed |
| WO-2005059652-A2 | PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF | AZ ELECTRONIC MATERIALS USA CORP. (DE) | 2005-06-30 | — | — | WO | disclosed |
| US-20050130058-A1 | Photoresist composition for deep UV and process thereof | MERCK PATENT GMBH (DE) | 2005-06-16 | — | — | US | disclosed |
| US-6893792-B2 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2005-05-17 | — | — | US | disclosed |
| US-20040224251-A1 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-11-11 | — | — | US | disclosed |
| WO-2004074928-A2 | PHOTORESIST COMPOSITION FOR DEEP ULTRAVIOLET LITHOGRAPHY | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2004-09-02 | — | — | WO | disclosed |
| US-20040166433-A1 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. | 2004-08-26 | — | — | US | disclosed |
| US-20030236351-A1 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITIED (JP) | 2003-12-25 | — | — | US | disclosed |
| US-20030194639-A1 | Positive resist composition | FORTINET, INC. | 2003-10-16 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11215926-B2 | Sulfonium compound, resist composition, and patterning process | HNRNPU, PAG1, LSM14A | GRIN2D 187/4885GRIN3B 617/4885GRIN1 253/4885 |
| US-20230266666-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | H1-0, H1-4, CHRM1 | GRIN2D 891/4885GRIN3B 1070/4885GRIN1 593/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | GRIN2D 1277/4885GRIN3B 2644/4885GRIN1 990/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.