Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.47 |
| ▸ | MEN1 | O00255 | 3/20 | 0.44 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.44 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.44 |
| ▸ | CA12 | O43570 | 1/20 | 0.44 |
| ▸ | CA1 | P00915 | 1/20 | 0.44 |
| ▸ | CA2 | P00918 | 1/20 | 0.44 |
| ▸ | CA9 | Q16790 | 1/20 | 0.44 |
| ▸ | GRIN2D | O15399 | 4/20 | 0.42 |
| ▸ | GRIN3B | O60391 | 4/20 | 0.42 |
| ▸ | GRIN1 | Q05586 | 4/20 | 0.42 |
| ▸ | GRIN2A | Q12879 | 4/20 | 0.42 |
| ▸ | GRIN2B | Q13224 | 4/20 | 0.42 |
| ▸ | GRIN2C | Q14957 | 4/20 | 0.42 |
| ▸ | GRIN3A | Q8TCU5 | 4/20 | 0.42 |
| ▸ | EPHX2 | P34913 | 3/20 | 0.40 |
| ▸ | GBA2 | Q9HCG7 | 2/20 | 0.39 |
| ▸ | GBA1 | P04062 | 1/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10229333 | 0.87 | ALDH1A1 (0.39) | ALDH1A1MEN1KMT2AL3MBTL1CA12 | |
| SCHEMBL5095244 | 0.85 | GRIN2D (0.50) | ALDH1A1MEN1KMT2AL3MBTL1CA12 | |
| SCHEMBL25812571 | 0.82 | MEN1 (0.46) | ALDH1A1MEN1KMT2AL3MBTL1CA12 | |
| SCHEMBL3913351 | 0.78 | CA12 (0.45) | ALDH1A1MEN1KMT2AL3MBTL1CA12 | |
| SCHEMBL855034 | 0.78 | CA12 (0.45) | ALDH1A1MEN1KMT2AL3MBTL1CA12 | |
| SCHEMBL13094610 | 0.77 | CA12 (0.41) | ALDH1A1MEN1KMT2AL3MBTL1CA12 | |
| SCHEMBL5917723 | 0.77 | MEN1 (0.51) | ALDH1A1MEN1KMT2AL3MBTL1CA12 | |
| SCHEMBL13668744 | 0.77 | GBA2 (0.51) | EPHX2GBA2GBA1 | |
| SCHEMBL919840 | 0.76 | CA12 (0.44) | ALDH1A1MEN1KMT2AL3MBTL1CA12 | |
| SCHEMBL12828003 | 0.76 | EPHX2 (0.36) | ALDH1A1MEN1KMT2AEPHX2LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 326 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11914294-B2 | Positive resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20240027902-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-20240027909-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-25 | — | — | US | disclosed |
| US-11860540-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-01-02 | — | — | US | disclosed |
| US-20230400766-A1 | ONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230350296-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-02 | — | — | US | disclosed |
| US-20230314944-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-05 | — | — | US | disclosed |
| US-20230288804-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-14 | — | — | US | disclosed |
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-7241554-B2 | Photosensitive composition and method for forming pattern using same | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-07-10 | — | — | US | disclosed |
| US-7241553-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-07-10 | — | — | US | disclosed |
| US-7241553-B2 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-07-10 | — | — | US | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070072115-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-29 | — | — | US | disclosed |
| US-20070072115-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-29 | — | — | US | disclosed |
| US-20060281022-A1 | Polymeric compound containing a repeated unit having a 2-oxatricyclo [4.2.1.0 4.8] nonan-3-one ring and photoresist resin composition | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2006-12-14 | — | — | US | disclosed |
| EP-1681307-A1 | POLYMERIC COMPOUND CONTAINING REPEATING UNIT HAVING 2-OXATRICYCLO[4.2.1.04,8]NONAN-3-ONE RING, AND PHOTORESIST RESIN COMPOSITION | Daicel Chemical Industries, Ltd. (JP) | 2006-07-19 | — | — | EP | disclosed |
| US-20060003254-A1 | Photosensitive composition and method for forming pattern using same | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-01-05 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230280651-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | EIF2B1, EIF2B5, EIF2B3 | ALDH1A1 3516/4885MEN1 3787/4885KMT2A 2222/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | ALDH1A1 1459/4885MEN1 3472/4885KMT2A 3299/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.