SCHEMBL197227

SCHEMBL197227

C=C(O)c1cccc2cc3ccccc3cc12

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.58
KDM4E B2RXH2 4/20 0.58
GAA P10253 2/20 0.58
MEN1 O00255 3/20 0.41
KMT2A Q03164 3/20 0.41
HSD17B10 Q99714 2/20 0.41
CYP1A2 P05177 2/20 0.41
NR4A1 P22736 1/20 0.41
NR4A2 P43354 1/20 0.41
NR4A3 Q92570 1/20 0.41
GLA P06280 1/20 0.41
HPGD P15428 1/20 0.41
CYP2C19 P33261 1/20 0.41
MAPT P10636 2/20 0.41
SMN1; SMN2 Q16637 1/20 0.41
PTK2B Q14289 1/20 0.39
L3MBTL1 Q9Y468 1/20 0.39
PTPN1 P18031 1/20 0.39
HIF1A Q16665 1/20 0.38
CYP1B1 Q16678 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27596310 0.82 ALDH1A1 (0.53) ALDH1A1KDM4EGAAMEN1KMT2A
SCHEMBL27564962 0.82 ALDH1A1 (0.56) ALDH1A1KDM4EGAAMEN1KMT2A
SCHEMBL17002609 0.82 ALDH1A1 (0.56) ALDH1A1KDM4EGAAMEN1KMT2A
SCHEMBL10842567 0.82 ALDH1A1 (0.56) ALDH1A1KDM4EGAAMEN1KMT2A
SCHEMBL31115692 0.82 ALDH1A1 (0.56) ALDH1A1KDM4EGAAMEN1KMT2A
SCHEMBL2672836 0.81 KDM4E (0.61) ALDH1A1KDM4EGAAMEN1KMT2A
SCHEMBL146735 0.80 NR4A1 (0.61) ALDH1A1KDM4EGAAMEN1KMT2A
Hydrogen Sulfide SCHEMBL28189994 0.80 ALDH1A1 (0.55) ALDH1A1KDM4EGAAMEN1KMT2A
SCHEMBL123193 0.79 ALDH1A1 (0.69) ALDH1A1KDM4EGAAMEN1KMT2A
SCHEMBL1394552 0.79 ALDH1A1 (0.58) ALDH1A1KDM4EGAAMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 106 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 US claimed
US-8916331-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-23 US claimed
US-8647808-B2 Fluorinated monomer, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-11 US claimed
EP-2466379-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2013-07-17 EP claimed
US-20130143163-A1 RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-06 US claimed
US-8420292-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-16 US claimed
US-8313886-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-20 US claimed
EP-2466379-A1 Resist composition and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2012-06-20 EP claimed
US-20120148945-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-06-14 US claimed
US-20110250539-A1 FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-13 US claimed
US-20110177455-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US claimed
US-20110151381-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-23 US claimed
US-20100266957-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-10-21 US claimed
WO-2024096017-A1 COMPOSITION FOR ELECTROCHEMICAL ELEMENT FUNCTIONAL LAYER, COMPOSITION PRECURSOR FOR ELECTROCHEMICAL ELEMENT FUNCTIONAL LAYER, ELECTROCHEMICAL ELEMENT FUNCTIONAL LAYER, LAMINATE FOR ELECTROCHEMICAL ELEMENT, AND ELECTROCHEMICAL ELEMENT 日本ゼオン株式会社 2024-05-10 WO disclosed
US-11360387-B2 Silicon-containing underlayers ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2022-06-14 US disclosed
US-10437150-B2 Composition for forming resist underlayer film with reduced outgassing NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-10-08 US disclosed
US-20080090173-A1 POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. 2008-04-17 US disclosed
US-20080085466-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
JP-2005114968-A RESIST MATERIAL AND METHOD FOR FORMING PATTERN SHIN ETSU CHEM CO LTD 2005-04-28 JP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110250539-A1 FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS H1-0, FRG1, H1-3 ALDH1A1 1697/4885KDM4E 1746/4885GAA 4439/4885
US-20110151381-A1 FLUORINATED MONOMER, FLUORINATED POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS AFF1, H1-0, FRG1 ALDH1A1 629/4885KDM4E 1789/4885GAA 4335/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.