SCHEMBL1973163

SCHEMBL1973163

CC(C)(C)Oc1ccccc1[Si](Cl)(Cl)Cl

nearest known ligand 0.39

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 1/20 0.39
CA12 O43570 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA4 P22748 1/20 0.33
CA7 P43166 1/20 0.33
CA9 Q16790 1/20 0.33
CA14 Q9ULX7 1/20 0.33
KIF11 P52732 1/20 0.33
KDM4E B2RXH2 1/20 0.30
ALDH1A1 P00352 1/20 0.30
HSD17B10 Q99714 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29570597 1.00 KCNH2 (0.39) KCNH2CA12CA1CA2CA4
SCHEMBL1969392 0.79 KCNH2 (0.37) KCNH2CA12CA1CA2CA4
SCHEMBL29126664 0.79 KCNH2 (0.37) KCNH2CA12CA1CA2CA4
SCHEMBL3820431 0.78 CA1 (0.45) KCNH2CA12CA1CA2CA4
SCHEMBL29428931 0.78 CA1 (0.45) KCNH2CA12CA1CA2CA4
SCHEMBL1354646 0.77 CA1 (0.55) CA12CA1CA2CA4CA7
SCHEMBL1975146 0.75 HPGD (0.35) KCNH2ALDH1A1
SCHEMBL1225153 0.72 ALDH1A1 (0.50) ALDH1A1
SCHEMBL31024018 0.72 IRAK4 (0.43) CA1CA2CA7CA9KDM4E
SCHEMBL1973858 0.72 IRAK4 (0.43) CA1CA2CA7CA9KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 139 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
EP-4679175-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Corporation (JP) 2026-01-14 EP disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-12493243-B2 Film-forming composition NISSAN CHEMICAL CORPORATION (JP) 2025-12-09 US disclosed
US-20250362609-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
US-20250348001-A1 METHOD FOR PRODUCING LAMINATE AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT NISSAN CHEMICAL CORPORATION (JP) 2025-11-13 US disclosed
US-20250172869-A1 WAFER END PROTECTIVE-FILM FORMING COMPOSITION FOR SEMICONDUCTOR MANUFACTURING NISSAN CHEMICAL CORPORATION (JP) 2025-05-29 US disclosed
US-8877425-B2 Silicon-containing resist underlayer film forming composition having fluorine-based additive NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-11-04 US disclosed
US-8828879-B2 Silicon-containing composition having sulfonamide group for forming resist underlayer film NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-09-09 US disclosed
EP-2479615-B1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL IND LTD (JP) 2014-04-23 EP disclosed
US-20130224957-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION HAVING FLUORINE-BASED ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-08-29 US disclosed
US-20130183830-A1 SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-07-18 US disclosed
EP-2479615-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM Nissan Chemical Industries, Ltd. (JP) 2012-07-25 EP disclosed
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-07-12 US disclosed
EP-2336256-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM WITH ONIUM GROUP Nissan Chemical Industries, Ltd. (JP) 2011-06-22 EP disclosed
US-7268201-B2 Insulating-film forming material and insulating film using the same FUJIFILM CORPORATION (JP) 2007-09-11 US disclosed
US-20040198855-A1 Insulating-film forming material and insulating film using the same FUJI PHOTO FILM CO., LTD. 2004-10-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 KCNH2 428/4885CA12 1049/4885CA1 967/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L KCNH2 879/4885CA12 257/4885CA1 5/4885
US-20120178261-A1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM STS, SI, MUS81 KCNH2 2253/4885CA12 16/4885CA1 35/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.