SCHEMBL19742955

SCHEMBL19742955

O=S(=O)(O)c1cccc(-c2ccncc2)c1Cl

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CCNC P24863 2/20 0.40
CDK8 P49336 2/20 0.40
NPC1 O15118 2/20 0.39
MAPT P10636 2/20 0.39
RAB9A P51151 2/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
ALDH1A1 P00352 1/20 0.39
TP53 P04637 1/20 0.39
MAPK10 P53779 1/20 0.39
HSD17B10 Q99714 1/20 0.39
LRRK2 Q5S007 1/20 0.37
HTR6 P50406 1/20 0.37
GFER P55789 1/20 0.37
NAMPT P43490 3/20 0.36
NFE2L2 Q16236 2/20 0.36
PIK3CD O00329 1/20 0.36
TTR P02766 1/20 0.35
PRKCI P41743 1/20 0.34
PTGS1 P23219 1/20 0.34
PTGS2 P35354 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4659354 0.84 ALDH1A1 (0.42) RAB9ASMN1; SMN2ALDH1A1HSD17B10TTR
SCHEMBL2782610 0.83 PTGS2 (0.43) CCNCCDK8NPC1MAPTRAB9A
SCHEMBL22534535 0.82 ALDH1A1 (0.47) NPC1MAPTRAB9ASMN1; SMN2ALDH1A1
SCHEMBL7414818 0.82 ALDH1A1 (0.47) NPC1MAPTRAB9ASMN1; SMN2ALDH1A1
SCHEMBL17888508 0.81 NPC1 (0.44) NPC1MAPTRAB9ASMN1; SMN2ALDH1A1
SCHEMBL20997818 0.78 MAPT (0.48) CCNCCDK8NPC1MAPTRAB9A
SCHEMBL10650989 0.74 DRD1 (0.32) TTR
SCHEMBL3772831 0.72 P2RX7 (0.47) NPC1MAPTRAB9ASMN1; SMN2ALDH1A1
Butyl Chloride SCHEMBL28241133 0.72 PTPN1 (0.40) TP53
SCHEMBL25488361 0.72 CA12 (0.42) NPC1MAPTRAB9ASMN1; SMN2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11815815-B2 Composition for forming silicon-containing resist underlayer film removable by wet process NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-11-14 US disclosed
US-20190265593-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ORGANIC GROUP HAVING DIHYDROXY GROUP NISSAN CHEMICAL CORPORATION (JP) 2019-08-29 US disclosed
US-20170371242-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM REMOVABLE BY WET PROCESS NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-12-28 US disclosed