SCHEMBL1999510

SCHEMBL1999510

CCCC1(C=C(C)C(=O)O)C2CC3CC(C2)CC1C3

nearest known ligand 0.41

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
CD81 P60033 2/20 0.33
HSD11B1 P28845 5/20 0.33
MEN1 O00255 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1397128 0.87 HSD11B1 (0.34) CD81HSD11B1
SCHEMBL564565 0.87 HSD11B1 (0.34) CD81HSD11B1
SCHEMBL6026604 0.81
Methacrylic Acid SCHEMBL4974078 0.81 HSD11B1 (0.31) HSD11B1
SCHEMBL4399721 0.79 HSD11B1 (0.32) CD81HSD11B1
SCHEMBL4399725 0.79 HSD11B1 (0.32) CD81HSD11B1
SCHEMBL3962965 0.78 HSD11B1 (0.41) HSD11B1
SCHEMBL3962973 0.78 HSD11B1 (0.41) HSD11B1
SCHEMBL6026599 0.75
SCHEMBL701765 0.75 CD81 (0.33) CD81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111683986-B Composition for forming cured film, alignment material, and retardation material 日产化学株式会社 2025-01-10 CN disclosed
CN-115975155-A Composition for forming cured film for alignment material, and retardation material 日产化学株式会社 2023-04-18 CN disclosed
US-9594303-B2 Resist pattern-forming method and photoresist composition JSR CORPORATION (JP) 2017-03-14 US disclosed
US-9348226-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2016-05-24 US disclosed
US-9104102-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2015-08-11 US disclosed
US-20150010866-A1 RESIST PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION JSR CORPORATION (JP) 2015-01-08 US disclosed
US-8758978-B2 Radiation-sensitive resin composition, resist pattern formation method, and polymer JSR CORPORATION (JP) 2014-06-24 US disclosed
US-8734904-B2 Methods of forming topographical features using segregating polymer mixtures INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-05-27 US disclosed
US-8535871-B2 Radiation-sensitive resin composition, method for forming a resist pattern, compound, and polymer JSR CORPORATION (JP) 2013-09-17 US disclosed
US-8440384-B2 Compound, salt, and radiation-sensitive resin composition JSR CORPORATION (JP) 2013-05-14 US disclosed
US-20120183902-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-07-19 US disclosed
US-20120171612-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYMER JSR CORPORATION (JP) 2012-07-05 US disclosed
US-20120156612-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A RESIST PATTERN, COMPOUND, AND POLYMER JSR CORPORATION (JP) 2012-06-21 US disclosed
US-20120135146-A1 METHODS OF FORMING TOPOGRAPHICAL FEATURES USING SEGREGATING POLYMER MIXTURES JSR CORPORATION (JP) 2012-05-31 US disclosed
US-20110212401-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2011-09-01 US disclosed
US-20110151378-A1 RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2011-06-23 US disclosed
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-7704669-B2 Acrylic polymer and radiation-sensitive resin composition JSR CORPORATION (JP) 2010-04-27 US disclosed
US-20070269754-A1 Acrylic Polymer and Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
US-20060234154-A1 Mixture containing acid generator and free radical catalyst; acrylated ester monomer JSR CORPORATION (JP) 2006-10-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120156612-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING A RESIST PATTERN, COMPOUND, AND POLYMER RER1, PRMT1, REV1 CD81 1648/4885HSD11B1 3550/4885MEN1 807/4885
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION AFF1, RER1, AFF4 CD81 665/4885HSD11B1 405/4885MEN1 1303/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.