SCHEMBL2009762

SCHEMBL2009762

NC1(C(=O)Cl)CC2CCC1C2

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 2/20 0.35
CYP2C9 P11712 1/20 0.35
HSD11B1 P28845 1/20 0.33
LMNA P02545 2/20 0.32
TSHR P16473 2/20 0.32
SLC22A2 O15244 1/20 0.32
SLC22A1 O15245 1/20 0.32
GRIN2D O15399 1/20 0.32
GRIN3B O60391 1/20 0.32
NFKB1 P19838 1/20 0.32
STAT6 P42226 1/20 0.32
GRIN1 Q05586 1/20 0.32
GRIN2A Q12879 1/20 0.32
GRIN2B Q13224 1/20 0.32
GRIN2C Q14957 1/20 0.32
GRIN3A Q8TCU5 1/20 0.32
SLC47A1 Q96FL8 1/20 0.32
SIGMAR1 Q99720 1/20 0.32
POLB P06746 1/20 0.31
BLM P54132 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9457723 0.83 THRB (0.35) THRBCYP2C9HSD11B1LMNATSHR
SCHEMBL26746340 0.83 SLC6A4 (0.41) THRBCYP2C9HSD11B1
SCHEMBL3733593 0.83 SLC6A4 (0.41) THRBCYP2C9HSD11B1
SCHEMBL202772 0.83 SLC6A4 (0.41) THRBCYP2C9HSD11B1
Water SCHEMBL10753838 0.82 SLC6A4 (0.40) THRBCYP2C9HSD11B1
SCHEMBL26747648 0.82 SLC1A2 (0.37) THRBCYP2C9HSD11B1LMNATSHR
Water SCHEMBL10753833 0.82 SLC6A4 (0.40) THRBCYP2C9HSD11B1
SCHEMBL1632303 0.77 ALDH1A1 (0.33) THRBCYP2C9HSD11B1TSHRALDH1A1
Hydrochloric Acid SCHEMBL1632301 0.76 ALDH1A1 (0.32) THRBCYP2C9HSD11B1LMNATSHR
SCHEMBL3688895 0.74 HSD11B1 (0.35) HSD11B1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7964332-B2 Methods of forming a pattern of a semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-21 US disclosed
US-7964332-B2 Methods of forming a pattern of a semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-21 US disclosed
US-7964332-B2 Methods of forming a pattern of a semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-21 US disclosed
US-20090162796-A1 METHODS OF FORMING A PATTERN OF A SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-06-25 US disclosed
US-20090162796-A1 METHODS OF FORMING A PATTERN OF A SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-06-25 US disclosed
US-20090162796-A1 METHODS OF FORMING A PATTERN OF A SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-06-25 US disclosed