Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22336436 | 0.92 | NPSR1 (0.31) | NPSR1 | |
| SCHEMBL18561114 | 0.89 | NPSR1 (0.30) | NPSR1 | |
| SCHEMBL18470632 | 0.84 | ALDH1A1 (0.33) | — | |
| SCHEMBL18470420 | 0.83 | NPSR1 (0.30) | NPSR1 | |
| SCHEMBL26619873 | 0.83 | NPSR1 (0.32) | NPSR1 | |
| SCHEMBL18477958 | 0.82 | — | — | |
| SCHEMBL22850212 | 0.82 | NPSR1 (0.34) | NPSR1 | |
| SCHEMBL22317808 | 0.82 | — | — | |
| SCHEMBL26312816 | 0.82 | NPSR1 (0.38) | NPSR1 | |
| SCHEMBL23519202 | 0.81 | NPSR1 (0.31) | NPSR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-23 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367214-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230367213-A1 | MASK BLANK, RESIST PATTERN FORMING PROCESS AND CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-11-16 | — | — | US | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| US-20230341775-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-26 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-20230296980-A1 | RESIST MATERIAL AND PATTERN FORMING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-21 | — | — | US | disclosed |
| US-10191372-B2 | Polymer, positive resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-01-29 | — | — | US | disclosed |
| EP-3343291-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-07-04 | — | — | EP | disclosed |
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| US-9944738-B2 | Polymer compound, positive resist composition, laminate, and resist patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-04-17 | — | — | US | disclosed |
| US-9897916-B2 | Compound, polymer compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-20180039177-A1 | POSITIVE RESIST COMPOSITION, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK BLANK | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-08 | — | — | US | disclosed |
| US-20170343898-A1 | POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-11-30 | — | — | US | disclosed |
| US-20170343898-A1 | POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-11-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20180180992-A1 | Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process | POLI, POLL, SLC11A2 | NPSR1 1902/4885 |
| US-20230375928-A1 | Sulfonium-Salt-Type Polymerizable Monomer, Polymer Photoacid Generator, Base Rein, Resist Composition, And Patterning Process | NAF1, RALA, RSU1 | NPSR1 1534/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.