SCHEMBL205085

SCHEMBL205085

CCC(C)N[Si](C)(C)NC(C)CC

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.36
ALDH1A1 P00352 1/20 0.36
TP53 P04637 1/20 0.36
HSP90AA1 P07900 1/20 0.36
CYP3A4 P08684 1/20 0.36
THRB P10828 1/20 0.36
ALOX15 P16050 1/20 0.36
CASP1 P29466 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
HIF1A Q16665 1/20 0.36
HSD17B10 Q99714 1/20 0.36
TDP1 Q9NUW8 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
CA12 O43570 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA9 Q16790 1/20 0.33
MMP1 P03956 1/20 0.31
MMP2 P08253 1/20 0.31
MMP3 P08254 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5689086 0.81
SCHEMBL6239543 0.81 TSHR (0.36) TSHRALDH1A1TP53HSP90AA1CYP3A4
SCHEMBL231825 0.78 TSHR (0.38) TSHRALDH1A1TP53HSP90AA1CYP3A4
SCHEMBL17102755 0.77 ALDH1A1 (0.33) TSHRALDH1A1TP53HSP90AA1CYP3A4
SCHEMBL31302757 0.73 SMN1; SMN2 (0.35) TSHRALDH1A1TP53HSP90AA1CYP3A4
SCHEMBL30260080 0.73 ALDH1A1 (0.35) TSHRALDH1A1TP53HSP90AA1CYP3A4
SCHEMBL31302767 0.73 SMN1; SMN2 (0.35) TSHRALDH1A1TP53HSP90AA1CYP3A4
SCHEMBL235489 0.73 ALDH1A1 (0.35) TSHRALDH1A1TP53HSP90AA1CYP3A4
SCHEMBL4217051 0.73 MMP1 (0.31) TSHRALDH1A1TP53HSP90AA1CYP3A4
SCHEMBL19973300 0.73 ALDH1A1 (0.31) TSHRALDH1A1TP53HSP90AA1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 123 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12518966-B2 Selective plasma enhanced atomic layer deposition VERSUM MATERIALS US, LLC (US) 2026-01-06 US claimed
EP-3347504-B1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS VERSUM MAT US LLC (US) 2024-09-25 EP claimed
CN-117904602-A Method for depositing conformal metal or metalloid silicon nitride films 弗萨姆材料美国有限责任公司 2024-04-19 CN claimed
US-20240047196-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MAT US LLC (US) 2024-02-08 US claimed
US-20240014036-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION VERSUM MATERIALS US, LLC 2024-01-11 US claimed
CN-117265512-A Method for depositing conformal metal or metalloid silicon nitride films and resulting films 弗萨姆材料美国有限责任公司 2023-12-22 CN claimed
CN-116918029-A selective thermal atomic layer deposition 弗萨姆材料美国有限责任公司 2023-10-20 CN claimed
CN-116761906-A Selective plasma enhanced atomic layer deposition 弗萨姆材料美国有限责任公司 2023-09-15 CN claimed
EP-4241299-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION Versum Materials US, LLC (US) 2023-09-13 EP claimed
EP-4240886-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION Versum Materials US, LLC (US) 2023-09-13 EP claimed
US-11732351-B2 Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films VERSUM MATERIALS US, LLC (US) 2023-08-22 US claimed
WO-2022119865-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION VERSUM MATERIALS US, LLC (US) 2022-06-09 WO claimed
WO-2022119860-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MATERIAL US, LLC (US) 2022-06-09 WO claimed
US-20210388489-A1 Methods for Depositing a Conformal Metal or Metalloid Silicon Nitride Film and Resultant Films VERSUM MATERIALS US, LLC (US) 2021-12-16 US claimed
CN-113088927-A Compositions and methods for depositing silicon oxide films 弗萨姆材料美国有限责任公司 2021-07-09 CN claimed
US-20180274097-A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM VERSUM MATERIALS US, LLC 2018-09-27 US claimed
US-20180245215-A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS VERSUM MATERIALS US, LLC 2018-08-30 US claimed
EP-3347504-A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS Air Products and Chemicals, Inc. (US) 2018-07-18 EP claimed
US-20150275355-A1 COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-10-01 US claimed
EP-2924143-A1 COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-09-30 EP claimed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150275355-A1 COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS NR4A3, NR4A1, RTN4 TSHR 769/4885ALDH1A1 3065/4885TP53 4653/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.