Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | THRB | P10828 | 1/20 | 0.36 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.36 |
| ▸ | EPHX1 | P07099 | 3/20 | 0.36 |
| ▸ | GLA | P06280 | 1/20 | 0.36 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.34 |
| ▸ | HSD11B1 | P28845 | 4/20 | 0.33 |
| ▸ | HSD11B2 | P80365 | 1/20 | 0.33 |
| ▸ | PKM | P14618 | 1/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Methacrylic Acid SCHEMBL21924975 | 1.00 | THRB (0.36) | THRBCYP2C9EPHX1GLAEPHX2 | |
| Methacrylic Acid SCHEMBL27686097 | 0.88 | PKM (0.44) | ALDH1A1HSD11B1PKMNPC1 | |
| Methacrylic Acid SCHEMBL737597 | 0.88 | PKM (0.44) | ALDH1A1HSD11B1PKMNPC1 | |
| Acetic Acid SCHEMBL3328941 | 0.86 | THRB (0.41) | THRBCYP2C9EPHX1GLAEPHX2 | |
| Methacrylic Acid SCHEMBL12802644 | 0.84 | EPHX2 (0.38) | THRBCYP2C9EPHX1GLAEPHX2 | |
| Adamantane SCHEMBL131439 | 0.81 | TDP1 (0.38) | CYP2C9EPHX2ALDH1A1HSD11B1 | |
| Adamantane SCHEMBL21924976 | 0.81 | TDP1 (0.38) | CYP2C9EPHX2ALDH1A1HSD11B1 | |
| Adamantane SCHEMBL22115918 | 0.81 | TDP1 (0.38) | CYP2C9EPHX2ALDH1A1HSD11B1 | |
| Methacrylic Acid SCHEMBL11899769 | 0.81 | ALDH1A1 (0.44) | EPHX1GLAALDH1A1HSD11B1PKM | |
| SCHEMBL27961991 | 0.80 | ALDH1A1 (0.56) | EPHX1GLAEPHX2ALDH1A1HSD11B1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 222 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119798525-A | Resin for immersion photoresist, preparation method and immersion photoresist | 宁波南大光电材料有限公司 | 2025-04-11 | — | — | CN | claimed |
| CN-119798524-A | Resin for immersion type ArF photoresist, preparation method and immersion type ArF photoresist | 宁波南大光电材料有限公司 | 2025-04-11 | — | — | CN | claimed |
| CN-114380937-B | Adamantane-containing photosensitive resin for black matrix photoresist, preparation method thereof, resin composition and application method thereof | 江苏博砚电子科技股份有限公司 | 2023-04-07 | — | — | CN | claimed |
| CN-114380937-A | Adamantane-containing photosensitive resin for black matrix photoresist, preparation method thereof, resin composition and application method thereof | 江苏博砚电子科技有限公司 | 2022-04-22 | — | — | CN | claimed |
| CN-104861878-B | High-capacity oily high-temperature-resistant anaerobic adhesive | 湖北回天新材料股份有限公司 | 2017-02-01 | — | — | CN | claimed |
| CN-122070309-A | Composition, resin composition, film-forming composition for lithography, and resist film-forming composition | 三菱瓦斯化学株式会社 | 2026-05-19 | — | — | CN | disclosed |
| CN-119798525-A | Resin for immersion photoresist, preparation method and immersion photoresist | 宁波南大光电材料有限公司 | 2025-04-11 | — | — | CN | disclosed |
| CN-119798524-A | Resin for immersion type ArF photoresist, preparation method and immersion type ArF photoresist | 宁波南大光电材料有限公司 | 2025-04-11 | — | — | CN | disclosed |
| CN-112782934-B | Resist composition and pattern forming method | 信越化学工业株式会社 | 2025-01-17 | — | — | CN | disclosed |
| CN-118339251-A | Release agent, adhesive composition, laminate, and method for producing semiconductor substrate | 日产化学株式会社 | 2024-07-12 | — | — | CN | disclosed |
| CN-118240132-A | Post-treatment method and application of photoresist resin | 徐州博康信息化学品有限公司 | 2024-06-25 | — | — | CN | disclosed |
| CN-116970119-A | Fluorine-containing resin for immersion photoresist and preparation method and application thereof | 宁波南大光电材料有限公司 | 2023-10-31 | — | — | CN | disclosed |
| US-20060166136-A1 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2006-07-27 | — | — | US | disclosed |
| EP-1684119-A2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-07-26 | — | — | EP | disclosed |
| US-7033728-B2 | Photoresist composition | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2006-04-25 | — | — | US | disclosed |
| CN-1692130-A | Unsaturated monomers, polymers, chemically amplified resist composition, and process of pattern formation | NIPPON ELECTRIC CO (JP) | 2005-11-02 | — | — | CN | disclosed |
| CN-1220914-C | Chemical reinforcing photoresist structure composition and sulfonium salt | SUMITOMO CHEMICAL CO (JP) | 2005-09-28 | — | — | CN | disclosed |
| WO-2005066714-A2 | PHOTORESIST COMPOSITION | AZ ELECTRONIC MATERIALS USA CORP. (DE) | 2005-07-21 | — | — | WO | disclosed |
| US-20050147915-A1 | Photoresist composition | MERCK PATENT GMBH (DE) | 2005-07-07 | — | — | US | disclosed |
| CN-1322968-A | Chemical reinforcing photoresist structure composition and sulfonium salt | SUMITOMO CHEMICAL CO (JP) | 2001-11-21 | — | — | CN | disclosed |