SCHEMBL2099682

SCHEMBL2099682

CCCC[Si](NC)(NC)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 1/20 0.36
HTT P42858 3/20 0.35
TSHR P16473 2/20 0.35
SIGMAR1 Q99720 1/20 0.35
EPHX1 P07099 3/20 0.34
ALDH1A1 P00352 2/20 0.34
MAPT P10636 2/20 0.34
EPHX2 P34913 1/20 0.34
POLB P06746 1/20 0.34
NR1H2 P55055 1/20 0.34
NR1H3 Q13133 1/20 0.34
KCNH3 Q9ULD8 1/20 0.34
PCSK9 Q8NBP7 1/20 0.33
HPGD P15428 1/20 0.33
GAA P10253 1/20 0.33
ALOX12 P18054 1/20 0.33
CRHBP P24387 1/20 0.33
CRHR2 Q13324 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101644 0.88 NR1H2 (0.32) NAAATSHRALDH1A1MAPTNR1H2
SCHEMBL2103831 0.84 NAAA (0.36) NAAAHTTTSHRSIGMAR1EPHX1
SCHEMBL2270650 0.80 NAAA (0.36) NAAAHTTTSHRSIGMAR1EPHX1
SCHEMBL2104455 0.79 TP53 (0.40) TSHRSIGMAR1MAPTNR1H2NR1H3
SCHEMBL2101256 0.77 NAAA (0.34) NAAAHTTTSHRSIGMAR1EPHX1
SCHEMBL18108273 0.75 SIGMAR1 (0.37) NAAAHTTTSHRSIGMAR1PCSK9
SCHEMBL3886636 0.74 TSHR (0.38) NAAAHTTTSHRSIGMAR1NR1H2
SCHEMBL27604670 0.74 TSHR (0.38) NAAAHTTTSHRSIGMAR1PCSK9
SCHEMBL2099742 0.73 NAAA (0.34) NAAAHTTTSHRSIGMAR1EPHX1
SCHEMBL2273441 0.73 SIGMAR1 (0.34) NAAAHTTTSHRSIGMAR1EPHX1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed