SCHEMBL2104455

SCHEMBL2104455

CC[Si](NC)(NC)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.40
TSHR P16473 1/20 0.35
KDM4E B2RXH2 1/20 0.34
CYP3A4 P08684 1/20 0.34
MAPT P10636 1/20 0.34
TAAR1 Q96RJ0 4/20 0.33
ATM Q13315 1/20 0.33
KCNN4 O15554 2/20 0.32
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
CALM1 P0DP23 1/20 0.32
SLC18A2 Q05940 1/20 0.31
SIGMAR1 Q99720 1/20 0.31
LMNA P02545 1/20 0.31
CYP2D6 P10635 1/20 0.31
HTR2A P28223 1/20 0.31
HRH1 P35367 1/20 0.31
NR1H2 P55055 1/20 0.31
NR1H3 Q13133 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101644 0.82 NR1H2 (0.32) TP53TSHRKDM4ECYP3A4MAPT
SCHEMBL2099561 0.81 KCNN4 (0.37) TP53KDM4ECYP3A4MAPTKCNN4
SCHEMBL2099682 0.79 NAAA (0.36) TSHRMAPTSIGMAR1NR1H2NR1H3
SCHEMBL2274777 0.76 TP53 (0.35) TP53TSHRKDM4ECYP3A4MAPT
SCHEMBL2273787 0.74 ESR1 (0.35) TP53TSHRKDM4ECYP3A4MAPT
SCHEMBL2104015 0.73 KDM4E (0.32) TP53TSHRKDM4ECYP3A4MAPT
SCHEMBL988676 0.71 NR1H2 (0.43) TP53TSHRKDM4EMAPTATM
SCHEMBL2272188 0.70 KMT2A (0.31) TP53TSHRKDM4ECYP3A4MAPT
SCHEMBL2100303 0.70 KCNN4 (0.35) TP53TSHRKDM4ECYP3A4MAPT
SCHEMBL49919 0.69 TSHR (0.41) TSHRKDM4ECYP3A4MAPTTAAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed