SCHEMBL2100570

SCHEMBL2100570

CC(CCl)(C[SiH](Cl)Cl)c1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CYP2C19 P33261 1/20 0.42
HIF1A Q16665 1/20 0.42
TAAR1 Q96RJ0 1/20 0.38
MAPK1 P28482 1/20 0.35
TSHR P16473 1/20 0.34
ALDH1A1 P00352 2/20 0.33
ALOX15 P16050 1/20 0.33
KCNN4 O15554 3/20 0.32
ESR1 P03372 2/20 0.32
ESR2 Q92731 2/20 0.32
CYP3A4 P08684 1/20 0.32
MAPT P10636 1/20 0.31
KMT2A Q03164 1/20 0.31
KIF11 P52732 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2543699 0.79 CYP2C19 (0.39) CYP2C19HIF1ATAAR1MAPK1TSHR
SCHEMBL17710390 0.77 CYP2C19 (0.47) CYP2C19HIF1ATAAR1MAPK1TSHR
SCHEMBL8397722 0.77 TAAR1 (0.52) CYP2C19HIF1ATAAR1MAPK1TSHR
SCHEMBL6324960 0.72 TSHR (0.42) CYP2C19TAAR1TSHRALDH1A1KCNN4
SCHEMBL4302387 0.69 CYP2C19 (0.52) CYP2C19HIF1ATAAR1MAPK1TSHR
SCHEMBL1502452 0.69 TAAR1 (0.58) CYP2C19HIF1ATAAR1MAPK1TSHR
SCHEMBL28272853 0.69 TAAR1 (0.46) CYP2C19HIF1ATAAR1MAPK1TSHR
SCHEMBL5097794 0.68 NR3C2 (0.36) CYP2C19HIF1ATAAR1MAPK1ALDH1A1
SCHEMBL5085357 0.67 TAAR1 (0.56) CYP2C19HIF1ATAAR1MAPK1TSHR
SCHEMBL6015470 0.67 TSHR (0.48) CYP2C19HIF1ATAAR1MAPK1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250326936-A1 ARTICLES INCLUDING SURFACE COATINGS AND METHODS TO PRODUCE THEM MAXTERIAL INC (US) 2025-10-23 US disclosed
US-12173166-B2 Articles including surface coatings and methods to produce them MAXTERIAL, INC. (US) 2024-12-24 US disclosed
US-12109812-B2 Ink jet printing method and ink jet printing apparatus SEIKO EPSON CORPORATION (JP) 2024-10-08 US disclosed
US-20230295827-A1 COATINGS AND COATED SURFACES INCLUDING LOW-SURFACE ENERGY INORGANIC PARTICLES MAXTERIAL INC (US) 2023-09-21 US disclosed
US-11542621-B1 Coatings and coated surfaces including low-surface energy inorganic particles MAXTERIAL, INC. (US) 2023-01-03 US disclosed
US-20220032618-A1 Ink Jet Printing Method And Ink Jet Printing Apparatus SEIKO EPSON CORPORATION (JP) 2022-02-03 US disclosed
EP-3691894-A1 ARTICLES INCLUDING SURFACE COATINGS AND METHODS TO PRODUCE THEM Maxterial, Inc. (US) 2020-08-12 EP disclosed
US-20190186035-A1 ARTICLES INCLUDING SURFACE COATINGS AND METHODS TO PRODUCE THEM MAXTERIAL INC (US) 2019-06-20 US disclosed
US-10259208-B2 Three-dimensional shaped object manufacturing device, method for manufacturing three-dimensional shaped object, and three-dimensional shaped object SEIKO EPSON CORPORATION (JP) 2019-04-16 US disclosed
WO-2019067950-A1 ARTICLES INCLUDING SURFACE COATINGS AND METHODS TO PRODUCE THEM MAXTERIAL, INC. (US) 2019-04-04 WO disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-7776397-B2 Process for producing chemical adsorption film and chemical adsorption film SEIKO EPSON CORPORATION (JP) 2010-08-17 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed
US-20090077798-A1 METHOD FOR FORMING CONDUCTIVE POST, METHOD FOR MANUFACTURING MULTILAYERED WIRING SUBSTRATE, AND METHOD FOR MANUFACTURING ELECTRONIC APPARATUS SEIKO EPSON CORPORATION (JP) 2009-03-26 US disclosed
US-20090071706-A1 METHOD FOR PRODUCING MULTILAYERED WIRING SUBSTRATE, MULTILAYERED WIRING SUBSTRATE, AND ELECTRONIC APPARATUS SEIKO EPSON CORPORATION (JP) 2009-03-19 US disclosed
US-20080317943-A1 METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING ELECTRO-OPTICAL DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE SEIKO EPSON CORPORATION (JP) 2008-12-25 US disclosed
US-20080311285-A1 CONTACT HOLE FORMING METHOD, CONDUCTING POST FORMING METHOD, WIRING PATTERN FORMING METHOD, MULTILAYERED WIRING SUBSTRATE PRODUCING METHOD, ELECTRO-OPTICAL DEVICE PRODUCING METHOD, AND ELECTRONIC APPARATUS PRODUCING METHOD SEIKO EPSON CORPORATION (JP) 2008-12-18 US disclosed
US-20080032109-A1 Method for Coating Blanks for the Production of Printed Circuit Boards (Pcb) LEISING GUNTHER 2008-02-07 US disclosed
US-20060019034-A1 Process for producing chemical adsorption film and chemical adsorption film SEIKO EPSON CORPORATION (JP) 2006-01-26 US disclosed
US-20050287392-A1 Organic electroluminescent device, method for producing the same, and electronic apparatus SEIKO EPSON CORPORATION (JP) 2005-12-29 US disclosed