SCHEMBL2102046

SCHEMBL2102046

CCN(CC)CCC[SiH](N(C)C)N(C)C

nearest known ligand 0.32

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 1/20 0.32
SLC2A1 P11166 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
CHRM1 P11229 2/20 0.30
SLC6A2 P23975 2/20 0.30
SLC6A4 P31645 2/20 0.30
ADRA1A P35348 2/20 0.30
OPRM1 P35372 2/20 0.30
DRD3 P35462 2/20 0.30
SLC6A3 Q01959 2/20 0.30
KCNH2 Q12809 2/20 0.30
CHRM2 P08172 1/20 0.30
HTR1A P08908 1/20 0.30
ADRA2A P08913 1/20 0.30
DRD1 P21728 1/20 0.30
DRD2 P14416 1/20 0.30
ADRA2C P18825 1/20 0.30
HTR2A P28223 1/20 0.30
HTR2C P28335 1/20 0.30
HRH1 P35367 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2099909 0.84
SCHEMBL2103104 0.76 ALDH1A1 (0.47)
SCHEMBL21409761 0.74 SIGMAR1 (0.34) SIGMAR1SLC2A1NPSR1CHRM1SLC6A2
SCHEMBL2103852 0.73 TSHR (0.35)
SCHEMBL2102240 0.72 SIGMAR1 (0.33) SIGMAR1SLC2A1NPSR1CHRM1SLC6A2
SCHEMBL235041 0.71 SIGMAR1 (0.42) SIGMAR1SLC2A1NPSR1CHRM1SLC6A2
SCHEMBL234338 0.71 SIGMAR1 (0.48) SIGMAR1SLC2A1NPSR1CHRM1SLC6A2
SCHEMBL15052279 0.71 SIGMAR1 (0.48) SIGMAR1SLC2A1NPSR1CHRM1SLC6A2
SCHEMBL23282519 0.68 ALDH1A1 (0.34) SIGMAR1SLC2A1
SCHEMBL2101921 0.68 PAOX (0.32) SIGMAR1SLC2A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed