SCHEMBL2102240

SCHEMBL2102240

CCN(CC)CCC[SiH](Cl)Cl

nearest known ligand 0.33

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 1/20 0.33
KDM4E B2RXH2 1/20 0.32
SLC2A1 P11166 1/20 0.32
NPSR1 Q6W5P4 1/20 0.31
CHRM2 P08172 1/20 0.31
HTR1A P08908 1/20 0.31
ADRA2A P08913 1/20 0.31
CHRM1 P11229 1/20 0.31
DRD1 P21728 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
ADRA1A P35348 1/20 0.31
OPRM1 P35372 1/20 0.31
DRD3 P35462 1/20 0.31
SLC6A3 Q01959 1/20 0.31
KCNH2 Q12809 1/20 0.31
PAOX Q6QHF9 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2273308 0.92 SIGMAR1 (0.36) SIGMAR1KDM4ESLC2A1NPSR1CHRM2
SCHEMBL2100424 0.83 MEN1 (0.30)
SCHEMBL29139982 0.76 SIGMAR1 (0.34) SIGMAR1SLC2A1NPSR1CHRM2HTR1A
SCHEMBL21409761 0.76 SIGMAR1 (0.34) SIGMAR1SLC2A1NPSR1CHRM2HTR1A
SCHEMBL2269180 0.75 SIGMAR1 (0.35) SIGMAR1KDM4ESLC2A1KCNH2
SCHEMBL2274508 0.73 SIGMAR1 (0.34) SIGMAR1KDM4EKCNH2
SCHEMBL15052279 0.73 SIGMAR1 (0.48) SIGMAR1SLC2A1NPSR1CHRM2HTR1A
SCHEMBL234338 0.73 SIGMAR1 (0.48) SIGMAR1SLC2A1NPSR1CHRM2HTR1A
SCHEMBL235041 0.73 SIGMAR1 (0.42) SIGMAR1KDM4ESLC2A1NPSR1CHRM2
SCHEMBL2103642 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed
EP-0617073-B1 Poly(silyleneethynylene phenyleneethynylenes), method for preparing same and hardened product thereof MITSUI CHEMICALS INC (JP) 1998-12-09 EP disclosed
US-5420238-A Heat resistant MITSUI TOATSU CHEMICALS, INC. (JP) 1995-05-30 US disclosed
EP-0617073-A2 Poly(silyleneethynylene phenyleneethynylenes), method for preparing same and hardened product thereof MITSUI TOATSU CHEMICALS, Inc. (JP) 1994-09-28 EP disclosed