SCHEMBL2102086

SCHEMBL2102086

CCCC[Si](Cl)(c1ccccc1)N(CC)CC

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.35
TLR8 Q9NR97 3/20 0.35
KCNH2 Q12809 3/20 0.33
NPC1 O15118 1/20 0.33
ALDH1A1 P00352 1/20 0.33
RAB9A P51151 1/20 0.33
TDP1 Q9NUW8 1/20 0.32
POLB P06746 1/20 0.31
GAA P10253 2/20 0.31
MAPT P10636 1/20 0.31
ALOX12 P18054 1/20 0.31
CRHBP P24387 1/20 0.31
HTT P42858 1/20 0.31
CRHR2 Q13324 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
CHRM2 P08172 1/20 0.31
HTR1A P08908 1/20 0.31
ADRA2A P08913 1/20 0.31
CHRM1 P11229 1/20 0.31
DRD1 P21728 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102665 0.89 NR1H2 (0.30) TSHR
SCHEMBL2100894 0.84 NPC1 (0.34) TSHRTLR8NPC1ALDH1A1RAB9A
SCHEMBL2104189 0.81 TSHR (0.31) TSHRKCNH2ALDH1A1CHRM2HTR1A
SCHEMBL706115 0.79 TSHR (0.36) TSHRTLR8HTTPCSK9LTA4H
SCHEMBL2100941 0.78 TSHR (0.37) TSHRKCNH2TDP1GAAMAPT
SCHEMBL2269308 0.78 TSHR (0.37) TSHRKCNH2TDP1GAAMAPT
SCHEMBL2102250 0.77 TSHR (0.34) TSHRKCNH2NPC1ALDH1A1RAB9A
SCHEMBL3482605 0.76 TSHR (0.34) TSHRTLR8HTTPCSK9LTA4H
SCHEMBL3482307 0.76 TSHR (0.34) TSHRTLR8HTTPCSK9LTA4H
SCHEMBL436840 0.75 TSHR (0.36) TSHRALDH1A1MAPTHTTNPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed