SCHEMBL2102250

SCHEMBL2102250

CCCC[Si](c1ccccc1)(N(C)C)N(CC)CC

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.34
KCNH2 Q12809 3/20 0.33
GAA P10253 2/20 0.33
HPGD P15428 1/20 0.33
PTGS2 P35354 1/20 0.33
ESR1 P03372 1/20 0.32
OPRM1 P35372 3/20 0.31
OPRL1 P41146 2/20 0.31
TDP1 Q9NUW8 1/20 0.31
MAPT P10636 1/20 0.30
ALOX12 P18054 1/20 0.30
CRHBP P24387 1/20 0.30
HTT P42858 1/20 0.30
CRHR2 Q13324 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30
SIGMAR1 Q99720 1/20 0.30
NPC1 O15118 1/20 0.30
ALDH1A1 P00352 1/20 0.30
RAB9A P51151 1/20 0.30
CHRM2 P08172 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100941 0.91 TSHR (0.37) TSHRKCNH2GAAHPGDPTGS2
SCHEMBL2101652 0.89
SCHEMBL2103061 0.89 TDP1 (0.34) TSHRKCNH2GAAHPGDOPRM1
SCHEMBL2102962 0.82 ALDH1A1 (0.31) TSHRHPGDMAPTCRHBPCRHR2
SCHEMBL2104384 0.80 ALDH1A1 (0.32) TSHRKCNH2GAAHPGDESR1
SCHEMBL2102725 0.77 ALDH1A1 (0.33) TSHRKCNH2GAAHPGDESR1
SCHEMBL2102086 0.77 TSHR (0.35) TSHRKCNH2GAAHPGDOPRM1
SCHEMBL2269308 0.77 TSHR (0.37) TSHRKCNH2GAAHPGDPTGS2
SCHEMBL2101242 0.75 ALDH1A1 (0.33) TSHRKCNH2HPGDESR1OPRM1
SCHEMBL2100894 0.75 NPC1 (0.34) TSHRGAAOPRM1OPRL1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed