SCHEMBL2104189

SCHEMBL2104189

CCN(CC)[Si](Cl)(CC)c1ccccc1

nearest known ligand 0.31

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.31
ALDH1A1 P00352 1/20 0.31
GLA P06280 1/20 0.31
TP53 P04637 1/20 0.31
TAAR1 Q96RJ0 1/20 0.31
CHRM2 P08172 1/20 0.31
HTR1A P08908 1/20 0.31
ADRA2A P08913 1/20 0.31
CHRM1 P11229 1/20 0.31
DRD1 P21728 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
ADRA1A P35348 1/20 0.31
OPRM1 P35372 1/20 0.31
DRD3 P35462 1/20 0.31
SLC6A3 Q01959 1/20 0.31
KCNH2 Q12809 1/20 0.31
AOC3 Q16853 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102665 0.84 NR1H2 (0.30) TSHR
SCHEMBL2102086 0.81 TSHR (0.35) TSHRALDH1A1CHRM2HTR1AADRA2A
SCHEMBL2104133 0.81 ALDH1A1 (0.33) TSHRALDH1A1TP53TAAR1AOC3
SCHEMBL2101359 0.78 TSHR (0.33) TSHRALDH1A1GLATP53CHRM2
SCHEMBL2101348 0.78 TP53 (0.33) TSHRALDH1A1GLATP53CHRM2
SCHEMBL2100486 0.78 TSHR (0.33) TSHRALDH1A1GLATP53CHRM2
SCHEMBL2101600 0.77 NR1I2 (0.36) TSHRALDH1A1GLATP53CHRM2
SCHEMBL2101242 0.74 ALDH1A1 (0.33) TSHRALDH1A1GLATP53CHRM2
SCHEMBL2270829 0.74 TSHR (0.33) TSHRALDH1A1GLATP53CHRM2
SCHEMBL2102962 0.73 ALDH1A1 (0.31) TSHRALDH1A1GLATP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed