SCHEMBL2102172

SCHEMBL2102172

CCNCN[SiH2]CCCc1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 1/20 0.44
MEN1 O00255 1/20 0.44
KMT2A Q03164 1/20 0.44
SIGMAR1 Q99720 11/20 0.44
ATM Q13315 1/20 0.40
TAAR1 Q96RJ0 1/20 0.40
CHRM2 P08172 1/20 0.40
HTR1A P08908 1/20 0.40
ADRA2A P08913 1/20 0.40
CHRM1 P11229 1/20 0.40
DRD1 P21728 1/20 0.40
SLC6A2 P23975 1/20 0.40
SLC6A4 P31645 1/20 0.40
ADRA1A P35348 1/20 0.40
OPRM1 P35372 1/20 0.40
DRD3 P35462 1/20 0.40
SLC6A3 Q01959 1/20 0.40
KCNH2 Q12809 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2267119 0.86 MEN1 (0.46) L3MBTL1MEN1KMT2ASIGMAR1CHRM2
SCHEMBL2100487 0.75 KCNH2 (0.54) L3MBTL1MEN1KMT2ASIGMAR1ATM
SCHEMBL2267574 0.74 L3MBTL1 (0.53) L3MBTL1MEN1KMT2ASIGMAR1ATM
SCHEMBL3441609 0.72 SIGMAR1 (0.75) MEN1KMT2ASIGMAR1DRD3
SCHEMBL8964010 0.72 L3MBTL1 (0.48) L3MBTL1MEN1KMT2ASIGMAR1CHRM2
SCHEMBL4344582 0.71 SIGMAR1 (0.72) MEN1KMT2ASIGMAR1DRD3
Iodide SCHEMBL31425558 0.71 SIGMAR1 (0.72) MEN1KMT2ASIGMAR1DRD3
SCHEMBL3429617 0.71 SIGMAR1 (0.73) L3MBTL1MEN1KMT2ASIGMAR1
Hydrochloric Acid SCHEMBL8508325 0.71 SIGMAR1 (0.72) MEN1KMT2ASIGMAR1DRD3
SCHEMBL10649922 0.69 SIGMAR1 (0.77) L3MBTL1MEN1KMT2ASIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed