SCHEMBL2102178

SCHEMBL2102178

CCC[Si](Cl)(NC)c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
MAPT P10636 2/20 0.31
GAA P10253 2/20 0.31
KMT2A Q03164 1/20 0.31
HPGD P15428 2/20 0.30
NPC1 O15118 1/20 0.30
KDM4E B2RXH2 1/20 0.30
CYP3A4 P08684 1/20 0.30
ALPL P05186 1/20 0.30
ALOX12 P18054 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
TP53 P04637 1/20 0.30
TSHR P16473 1/20 0.30
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101256 0.89 NAAA (0.34) MAPTGAAHPGDKDM4EALOX12
SCHEMBL2103213 0.84 GAA (0.34) MAPTGAAKMT2AHPGDNPC1
SCHEMBL2104015 0.83 KDM4E (0.32) MAPTGAAHPGDNPC1KDM4E
SCHEMBL2272184 0.75 KMT2A (0.32) MAPTGAAKMT2AHPGDKDM4E
SCHEMBL2101644 0.75 NR1H2 (0.32) MAPTGAAKMT2AHPGDKDM4E
SCHEMBL705990 0.74 TP53 (0.35) GAAKMT2AHPGDKDM4ETP53
SCHEMBL704073 0.74 TP53 (0.35) GAAKMT2AHPGDKDM4ETP53
SCHEMBL707143 0.74 TP53 (0.35) GAAKMT2AHPGDKDM4ETP53
SCHEMBL20499846 0.73 ESR1 (0.33) MAPTGAAKMT2AHPGDKDM4E
SCHEMBL2099742 0.73 NAAA (0.34) MAPTGAAHPGDKDM4ETSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed