SCHEMBL2103213

SCHEMBL2103213

CCC[Si](Cl)(NCC)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
GAA P10253 3/20 0.34
MAPT P10636 1/20 0.34
HPGD P15428 3/20 0.33
KDM4E B2RXH2 3/20 0.33
SMN1; SMN2 Q16637 3/20 0.33
ALDH1A1 P00352 2/20 0.33
ALPL P05186 1/20 0.33
ALOX12 P18054 1/20 0.33
KCNN4 O15554 1/20 0.32
LMNA P02545 1/20 0.31
HTT P42858 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
CYP19A1 P11511 1/20 0.31
NR1H2 P55055 1/20 0.31
NR1H3 Q13133 1/20 0.31
KMT2A Q03164 1/20 0.31
NPC1 O15118 2/20 0.30
PKM P14618 1/20 0.30
RAB9A P51151 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2099742 0.89 NAAA (0.34) GAAMAPTHPGDKDM4EALDH1A1
SCHEMBL2102178 0.84 MAPT (0.31) GAAMAPTHPGDKDM4ESMN1; SMN2
SCHEMBL2102236 0.83 KCNN4 (0.34) GAAMAPTHPGDKDM4ESMN1; SMN2
SCHEMBL2102969 0.79 GAA (0.35) GAAMAPTHPGDKDM4ESMN1; SMN2
SCHEMBL2272798 0.75 GAA (0.35) GAAMAPTHPGDKDM4ESMN1; SMN2
SCHEMBL707143 0.74 TP53 (0.35) GAAHPGDKDM4EALDH1A1CYP19A1
SCHEMBL704073 0.74 TP53 (0.35) GAAHPGDKDM4EALDH1A1CYP19A1
SCHEMBL705990 0.74 TP53 (0.35) GAAHPGDKDM4EALDH1A1CYP19A1
SCHEMBL2099500 0.74 KCNN4 (0.37) GAAMAPTHPGDKDM4EALDH1A1
SCHEMBL2103096 0.74 KCNN4 (0.41) GAAMAPTHPGDKDM4EALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed