SCHEMBL2104015

SCHEMBL2104015

CC[Si](Cl)(NC)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.32
CYP3A4 P08684 1/20 0.32
MAPT P10636 1/20 0.32
TP53 P04637 1/20 0.32
TSHR P16473 1/20 0.32
HPGD P15428 2/20 0.32
NPC1 O15118 1/20 0.32
GAA P10253 3/20 0.32
LMNA P02545 1/20 0.32
ALDH1A1 P00352 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
ATM Q13315 1/20 0.31
TAAR1 Q96RJ0 1/20 0.31
PIN1 Q13526 1/20 0.31
ESR1 P03372 1/20 0.30
ESR2 Q92731 1/20 0.30
KCNN4 O15554 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102178 0.83 MAPT (0.31) KDM4ECYP3A4MAPTTP53TSHR
SCHEMBL2102236 0.83 KCNN4 (0.34) KDM4EMAPTTP53HPGDGAA
SCHEMBL2101256 0.80 NAAA (0.34) KDM4EMAPTTSHRHPGDGAA
SCHEMBL2274777 0.73 TP53 (0.35) KDM4ECYP3A4MAPTTP53TSHR
SCHEMBL2104455 0.73 TP53 (0.40) KDM4ECYP3A4MAPTTP53TSHR
SCHEMBL2100398 0.72 KCNN4 (0.33) KDM4ECYP3A4MAPTTP53TSHR
SCHEMBL2101254 0.72 TAAR1 (0.33) CYP3A4LMNAALDH1A1TAAR1
SCHEMBL2102659 0.72 TSHR (0.38) KDM4ECYP3A4MAPTTSHRHPGD
SCHEMBL2100774 0.72 TSHR (0.38) KDM4ECYP3A4MAPTTSHRHPGD
SCHEMBL705504 0.72 TP53 (0.38) KDM4EMAPTTP53TSHRHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed