SCHEMBL2104384

SCHEMBL2104384

CCC[Si](c1ccccc1)(N(CC)CC)N(CC)CC

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.32
HPGD P15428 4/20 0.32
TSHR P16473 3/20 0.32
MAPT P10636 2/20 0.32
GLA P06280 1/20 0.31
TP53 P04637 1/20 0.31
ESR1 P03372 1/20 0.31
GAA P10253 2/20 0.31
KCNH2 Q12809 2/20 0.31
KDM4E B2RXH2 2/20 0.31
CHRM2 P08172 1/20 0.31
HTR1A P08908 1/20 0.31
ADRA2A P08913 1/20 0.31
CHRM1 P11229 1/20 0.31
DRD1 P21728 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
ADRA1A P35348 1/20 0.31
OPRM1 P35372 1/20 0.31
DRD3 P35462 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101652 0.90
SCHEMBL2100941 0.88 TSHR (0.37) HPGDTSHRMAPTESR1GAA
SCHEMBL2101242 0.83 ALDH1A1 (0.33) ALDH1A1HPGDTSHRMAPTGLA
SCHEMBL12802418 0.81 ALDH1A1 (0.32) ALDH1A1HPGDTSHRMAPTGLA
SCHEMBL2102725 0.81 ALDH1A1 (0.33) ALDH1A1HPGDTSHRTP53ESR1
SCHEMBL2102250 0.80 TSHR (0.34) ALDH1A1HPGDTSHRMAPTESR1
SCHEMBL2273997 0.79 MAPT (0.33) ALDH1A1HPGDTSHRMAPTGLA
SCHEMBL2102962 0.78 ALDH1A1 (0.31) ALDH1A1HPGDTSHRMAPTGLA
SCHEMBL2270928 0.76 TSHR (0.30) TSHR
SCHEMBL2102665 0.76 NR1H2 (0.30) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed