SCHEMBL2102295

SCHEMBL2102295

CCN(CC)[Si](NC)(NC)c1ccccc1

nearest known ligand 0.32

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 2/20 0.32
NR1I2 O75469 1/20 0.32
TSHR P16473 3/20 0.31
ALDH1A1 P00352 1/20 0.31
GLA P06280 1/20 0.31
KDM4E B2RXH2 2/20 0.31
CYP3A4 P08684 1/20 0.31
MAPT P10636 1/20 0.31
TP53 P04637 1/20 0.31
CHRM2 P08172 1/20 0.31
HTR1A P08908 1/20 0.31
ADRA2A P08913 1/20 0.31
CHRM1 P11229 1/20 0.31
DRD1 P21728 1/20 0.31
SLC6A2 P23975 1/20 0.31
SLC6A4 P31645 1/20 0.31
ADRA1A P35348 1/20 0.31
OPRM1 P35372 1/20 0.31
DRD3 P35462 1/20 0.31
SLC6A3 Q01959 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2102950 0.83 ESR1 (0.33) L3MBTL1NR1I2TSHRALDH1A1GLA
SCHEMBL2102824 0.76
SCHEMBL2100803 0.76 TSHR (0.35) L3MBTL1TSHRALDH1A1KDM4ECYP3A4
SCHEMBL2101650 0.75 KDM4E (0.32) L3MBTL1KDM4EMEN1KMT2ANPC1
SCHEMBL2102622 0.73 KCNH2 (0.39) L3MBTL1TSHRALDH1A1GLAMAPT
SCHEMBL2271289 0.73 TP53 (0.36) L3MBTL1TSHRALDH1A1GLAKDM4E
SCHEMBL2100019 0.73 TP53 (0.36) L3MBTL1NR1I2TSHRALDH1A1GLA
SCHEMBL9979418 0.73 TP53 (0.36) L3MBTL1NR1I2TSHRALDH1A1GLA
SCHEMBL2101600 0.72 NR1I2 (0.36) NR1I2TSHRALDH1A1GLAMAPT
SCHEMBL10626373 0.71 ESR1 (0.37) L3MBTL1NR1I2TSHRALDH1A1GLA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed