SCHEMBL2102965

SCHEMBL2102965

CCN(CC)[SiH](CCN(C)C)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 1/20 0.39
HTR2A P28223 3/20 0.37
HRH1 P35367 3/20 0.37
LTA4H P09960 1/20 0.36
SIGMAR1 Q99720 1/20 0.35
MAPT P10636 1/20 0.34
ALDH1A1 P00352 2/20 0.33
TSHR P16473 2/20 0.33
OPRM1 P35372 2/20 0.33
DRD3 P35462 2/20 0.33
OPRD1 P41143 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
DRD2 P14416 1/20 0.33
LMNA P02545 1/20 0.33
CYP1A2 P05177 1/20 0.33
CHRM2 P08172 1/20 0.33
CHRM4 P08173 1/20 0.33
CHRM5 P08912 1/20 0.33
ADRA2A P08913 1/20 0.33
CYP2D6 P10635 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2273433 0.89 HTR2A (0.41) TAAR1HTR2AHRH1SIGMAR1ALDH1A1
SCHEMBL2271005 0.82 L3MBTL1 (0.32) LTA4HMAPTALDH1A1TSHROPRM1
SCHEMBL2100150 0.81 ALDH1A1 (0.35) TAAR1HTR2AHRH1LTA4HMAPT
SCHEMBL2271138 0.79 LTA4H (0.36) LTA4HMAPTOPRM1DRD3LMNA
SCHEMBL2268925 0.78 L3MBTL1 (0.34) SIGMAR1MAPTALDH1A1TSHROPRM1
SCHEMBL28034726 0.75 AOC3 (0.34) TAAR1MAPTALDH1A1TSHROPRM1
SCHEMBL2272371 0.72 HTR2A (0.42) TAAR1HTR2AHRH1SIGMAR1MAPT
SCHEMBL2104136 0.71 TAAR1 (0.43) TAAR1HTR2AHRH1LTA4HSIGMAR1
SCHEMBL2103965 0.69 TAAR1 (0.38) TAAR1HTR2AHRH1LTA4HSIGMAR1
SCHEMBL2100542 0.69 L3MBTL1 (0.36) LTA4HSIGMAR1ALDH1A1TSHROPRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed