SCHEMBL2103965

SCHEMBL2103965

CCN[SiH](CCN(C)C)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 1/20 0.38
HTR2A P28223 3/20 0.36
HRH1 P35367 3/20 0.36
SIGMAR1 Q99720 1/20 0.34
MAPT P10636 1/20 0.33
OPRM1 P35372 2/20 0.33
DRD3 P35462 2/20 0.33
DRD2 P14416 1/20 0.33
TSHR P16473 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
LMNA P02545 2/20 0.33
CYP1A2 P05177 1/20 0.33
CHRM2 P08172 1/20 0.33
CHRM4 P08173 1/20 0.33
CHRM5 P08912 1/20 0.33
ADRA2A P08913 1/20 0.33
CYP2D6 P10635 1/20 0.33
CHRM1 P11229 1/20 0.33
ADRA2B P18089 1/20 0.33
CHRM3 P20309 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2270813 0.81 ALDH1A1 (0.34) TAAR1HTR2AHRH1TSHRALDH1A1
SCHEMBL2267110 0.81 KCNN4 (0.33) SIGMAR1ALDH1A1KDM4E
SCHEMBL2268688 0.78 SIGMAR1 (0.34) SIGMAR1MAPTTSHRSMN1; SMN2HTT
SCHEMBL2269967 0.77 KCNN4 (0.35) SIGMAR1LMNACYP2D6
SCHEMBL2102700 0.71 KCNN4 (0.34) TAAR1HTR2AHRH1SIGMAR1OPRM1
SCHEMBL2272371 0.70 HTR2A (0.42) TAAR1HTR2AHRH1SIGMAR1MAPT
SCHEMBL2104136 0.69 TAAR1 (0.43) TAAR1HTR2AHRH1SIGMAR1MAPT
SCHEMBL2102965 0.69 TAAR1 (0.39) TAAR1HTR2AHRH1SIGMAR1MAPT
SCHEMBL2102165 0.68 GAA (0.31) HTT
SCHEMBL2268660 0.68 KCNN4 (0.38) TAAR1SIGMAR1MAPTTSHRSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed