SCHEMBL2103219

SCHEMBL2103219

CCN(CC)C(C)(N[SiH2]c1ccccc1)N(CC)CC

nearest known ligand 0.35

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
CHRM1 P11229 2/20 0.33
RIPK1 Q13546 1/20 0.31
KCNN4 O15554 1/20 0.31
NPSR1 Q6W5P4 1/20 0.30
SIGMAR1 Q99720 1/20 0.30
CACNA1F O60840 1/20 0.30
CHRM2 P08172 1/20 0.30
ADRA2B P18089 1/20 0.30
CHRM3 P20309 1/20 0.30
ADRA1A P35348 1/20 0.30
HRH1 P35367 1/20 0.30
OPRK1 P41145 1/20 0.30
CACNA1D Q01668 1/20 0.30
SLC6A3 Q01959 1/20 0.30
KCNH2 Q12809 1/20 0.30
CACNA1S Q13698 1/20 0.30
CACNA1C Q13936 1/20 0.30
SCN5A Q14524 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101904 0.79 KCNN4 (0.37) KCNN4
SCHEMBL9337566 0.71 KDM4E (0.38) RIPK1KCNN4NPSR1
SCHEMBL2100306 0.68 KCNN4 (0.38) KCNN4
SCHEMBL2099360 0.66
SCHEMBL2101823 0.65 KCNH2 (0.37) CHRM1NPSR1SIGMAR1CHRM2ADRA1A
SCHEMBL12802427 0.65 TSHR (0.31)
SCHEMBL2269128 0.65 KCNN4 (0.38) KCNN4NPSR1SIGMAR1KCNH2
SCHEMBL2102267 0.65
SCHEMBL2101197 0.65
SCHEMBL2103031 0.64 PGR (0.37) SIGMAR1ADRA2BHRH1KCNH2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed