SCHEMBL2103031

SCHEMBL2103031

CCN(CC)C(N[SiH2]c1ccccc1)N(CC)CC

nearest known ligand 0.37

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
PGR P06401 1/20 0.37
ADRA2A P08913 1/20 0.37
ADRA2B P18089 1/20 0.37
HTR2A P28223 1/20 0.37
HRH1 P35367 1/20 0.37
KCNH2 Q12809 1/20 0.37
ALDH1A1 P00352 2/20 0.36
HPGD P15428 1/20 0.36
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
CYP2D6 P10635 1/20 0.31
KCNE1 P15382 1/20 0.31
KCNA5 P22460 1/20 0.31
SIGMAR1 Q99720 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2101330 0.78 KDM4E (0.32) HTR2AHRH1ALDH1A1
SCHEMBL2103221 0.74 PGR (0.35) PGRADRA2AADRA2BHTR2AHRH1
SCHEMBL2101246 0.71 ADRA2A (0.38) PGRADRA2AADRA2BHTR2AHRH1
SCHEMBL2103435 0.71 SIGMAR1 (0.41) CYP2D6SIGMAR1
SCHEMBL2101597 0.71 ADRA2A (0.38) PGRADRA2AADRA2BHTR2AHRH1
SCHEMBL6114335 0.70 TDP1 (0.42) ALDH1A1CYP2D6SIGMAR1
SCHEMBL2102651 0.69 ADRA2A (0.40) PGRADRA2AADRA2BHTR2AHRH1
SCHEMBL2101823 0.67 KCNH2 (0.37) ADRA2AKCNH2ALDH1A1SIGMAR1
SCHEMBL2269128 0.66 KCNN4 (0.38) KCNH2ALDH1A1HPGDSIGMAR1
SCHEMBL2102750 0.66 PGR (0.34) PGRADRA2AADRA2BHTR2AHRH1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed