SCHEMBL2269128

SCHEMBL2269128

CCN[SiH2]c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KCNN4 O15554 1/20 0.38
TP53 P04637 1/20 0.36
SIGMAR1 Q99720 1/20 0.34
NPSR1 Q6W5P4 2/20 0.33
KCNH2 Q12809 1/20 0.32
LMNA P02545 1/20 0.32
MAPT P10636 3/20 0.31
GAA P10253 2/20 0.31
KDM4E B2RXH2 1/20 0.31
CYP3A4 P08684 1/20 0.31
PSIP1 O75475 1/20 0.31
PKM P14618 1/20 0.31
TSHR P16473 1/20 0.31
ALPL P05186 1/20 0.31
HPGD P15428 1/20 0.31
ALOX12 P18054 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2103327 0.82 HTT (0.33) KCNN4TP53SIGMAR1MAPTGAA
SCHEMBL10709653 0.81 SIGMAR1 (0.38) TP53SIGMAR1NPSR1LMNAMAPT
SCHEMBL6114217 0.78 ACHE (0.38) TP53MAPTGAAKDM4EHPGD
SCHEMBL2101823 0.76 KCNH2 (0.37) SIGMAR1NPSR1KCNH2MAPTGAA
SCHEMBL6114613 0.76 ACHE (0.42) NPSR1LMNAMAPTGAACYP3A4
SCHEMBL2103221 0.72 PGR (0.35) KCNH2MAPTHPGDALDH1A1
SCHEMBL2100308 0.72 TAAR1 (0.35) SIGMAR1MAPTKDM4ECYP3A4PKM
SCHEMBL2103435 0.72 SIGMAR1 (0.41) KCNN4TP53SIGMAR1MAPTCYP3A4
SCHEMBL2269741 0.70
SCHEMBL2101906 0.70 MAPT (0.33) MAPTTSHRALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119213168-A Boron-containing precursors for ALD deposition of boron nitride films 弗萨姆材料美国有限责任公司 2024-12-27 CN claimed
US-20240158915-A1 COMPOSITION FOR ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2024-05-16 US claimed
EP-4288579-A1 COMPOSITION FOR ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS Versum Materials US, LLC (US) 2023-12-13 EP claimed
CN-117083412-A Composition for atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2023-11-17 CN claimed
EP-3663301-B1 BORON-CONTAINING COMPOUNDS, COMPOSITIONS, AND METHODS FOR THE DEPOSITION OF BORON CONTAINING FILMS VERSUM MAT US LLC (US) 2023-08-30 EP claimed
WO-2022197410-A1 COMPOSITION FOR ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2022-09-22 WO claimed
US-8912353-B2 Organoaminosilane precursors and methods for depositing films comprising same AIR PRODUCTS AND CHEMICALS, INC. (US) 2014-12-16 US claimed
EP-2392691-B1 Organoaminosilane precursors and methods for depositing films comprising the same AIR PROD & CHEM (US) 2014-09-03 EP claimed
US-20120128897-A1 Organoaminosilane Precursors and Methods for Depositing Films Comprising Same AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-05-24 US claimed
EP-2392691-A1 Organoaminosilane precursors and methods for depositing films comprising the same AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-12-07 EP claimed
CN-119213168-A Boron-containing precursors for ALD deposition of boron nitride films 弗萨姆材料美国有限责任公司 2024-12-27 CN disclosed
US-20240158915-A1 COMPOSITION FOR ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2024-05-16 US disclosed
EP-4288579-A1 COMPOSITION FOR ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS Versum Materials US, LLC (US) 2023-12-13 EP disclosed
CN-117083412-A Composition for atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2023-11-17 CN disclosed
WO-2022197410-A1 COMPOSITION FOR ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2022-09-22 WO disclosed
EP-2535343-A2 Organoaminosilane precursors and methods for making and using same AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-12-19 EP disclosed
US-20120128897-A1 Organoaminosilane Precursors and Methods for Depositing Films Comprising Same AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-05-24 US disclosed
CN-102295657-A Organoaminosilane precursors and methods for depositing films comprising the same 2011-12-28 CN disclosed
EP-2392691-A1 Organoaminosilane precursors and methods for depositing films comprising the same AIR PRODUCTS AND CHEMICALS, INC. (US) 2011-12-07 EP disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120128897-A1 Organoaminosilane Precursors and Methods for Depositing Films Comprising Same C1S, C9, C5 KCNN4 238/4885TP53 3557/4885SIGMAR1 1397/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.