SCHEMBL2103258

SCHEMBL2103258

CN(C)CCN[SiH](Cl)c1ccccc1

nearest known ligand 0.48

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 2/20 0.39
CYP2C19 P33261 1/20 0.39
HTR2A P28223 2/20 0.37
HRH1 P35367 2/20 0.37
MALT1 Q9UDY8 1/20 0.36
NCF1 P14598 1/20 0.36
TOP2A P11388 1/20 0.36
SIGMAR1 Q99720 1/20 0.35
NPC1 O15118 1/20 0.35
POLB P06746 1/20 0.35
SLC2A1 P11166 1/20 0.35
APOBEC3A P31941 1/20 0.35
RAD52 P43351 1/20 0.35
RAB9A P51151 1/20 0.35
KMT2A Q03164 1/20 0.35
APOBEC3G Q9HC16 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2100400 0.77 TAAR1 (0.42) TAAR1HTR2AHRH1SIGMAR1KMT2A
SCHEMBL2104143 0.74 KCNN4 (0.35) HTR2AHRH1SIGMAR1
SCHEMBL2104136 0.71 TAAR1 (0.43) TAAR1HTR2AHRH1SIGMAR1
SCHEMBL14797999 0.69 HPGD (0.35) POLBRAB9AKMT2A
SCHEMBL2102509 0.68
SCHEMBL2100897 0.67 SIGMAR1 (0.47) TAAR1HTR2AHRH1SIGMAR1
SCHEMBL2103329 0.66
SCHEMBL2101473 0.66 TSHR (0.38) TAAR1POLB
SCHEMBL2100800 0.66 ALDH1A1 (0.39) TAAR1HTR2AHRH1SIGMAR1
SCHEMBL171395 0.66 ALDH1A1 (0.56) TAAR1CYP2C19HTR2AHRH1MALT1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed