SCHEMBL2103512

SCHEMBL2103512

CCN(CC)CN[SiH2]c1ccccc1C(C)(C)C

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CACNA2D1 P54289 3/20 0.33
ALDH1A1 P00352 2/20 0.32
TSHR P16473 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
CHRM2 P08172 1/20 0.32
HTR1A P08908 1/20 0.32
ADRA2A P08913 1/20 0.32
CHRM1 P11229 1/20 0.32
DRD1 P21728 1/20 0.32
SLC6A2 P23975 1/20 0.32
SLC6A4 P31645 1/20 0.32
ADRA1A P35348 1/20 0.32
OPRM1 P35372 1/20 0.32
DRD3 P35462 1/20 0.32
SLC6A3 Q01959 1/20 0.32
KCNH2 Q12809 1/20 0.32
SIGMAR1 Q99720 2/20 0.30
KDM4E B2RXH2 1/20 0.30
GAA P10253 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2268949 0.81 TSHR (0.38) ALDH1A1TSHRTDP1KDM4EGAA
SCHEMBL2103819 0.75 ALDH1A1 (0.33) ALDH1A1TSHRTDP1KDM4EGAA
SCHEMBL2104333 0.72 TSHR (0.42) CACNA2D1TSHRKDM4E
SCHEMBL2269758 0.72 TSHR (0.39) ALDH1A1TSHRTDP1KDM4EKMT2A
SCHEMBL2101823 0.72 KCNH2 (0.37) CACNA2D1ALDH1A1CHRM2HTR1AADRA2A
SCHEMBL2272999 0.71 ALDH1A1 (0.41) ALDH1A1TSHRTDP1SIGMAR1KDM4E
SCHEMBL27173776 0.67 ALDH1A1 (0.44) ALDH1A1TSHRTDP1SIGMAR1KDM4E
SCHEMBL2273300 0.65 ALDH1A1 (0.43) ALDH1A1TSHRTDP1KDM4EKMT2A
SCHEMBL2102423 0.65
SCHEMBL9564928 0.64 ALDH1A1 (0.41) ALDH1A1TSHRTDP1KDM4EKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed