SCHEMBL2104457

SCHEMBL2104457

CNC(C[SiH2]c1ccccc1)NC

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 4/20 0.39
SLC18A2 Q05940 1/20 0.39
SIGMAR1 Q99720 1/20 0.39
HTR2A P28223 3/20 0.34
HRH1 P35367 2/20 0.34
TSHR P16473 2/20 0.33
CYP3A4 P08684 2/20 0.33
KDM4E B2RXH2 1/20 0.33
MAPT P10636 1/20 0.33
CHRM2 P08172 1/20 0.33
ADRA1A P35348 1/20 0.33
RGS12 O14924 1/20 0.33
GLA P06280 1/20 0.33
CYP2D6 P10635 1/20 0.33
CYP2C9 P11712 1/20 0.33
PKM P14618 1/20 0.33
ALOX15 P16050 1/20 0.33
ALOX12 P18054 1/20 0.33
ADRA2C P18825 1/20 0.33
NFKB1 P19838 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2099562 0.78 SIGMAR1 (0.42) SIGMAR1TSHRCYP3A4PKMALOX15
SCHEMBL2268970 0.78 HTR2A (0.35) TAAR1SLC18A2SIGMAR1HTR2AHRH1
SCHEMBL8427323 0.76 TDP1 (0.37) TAAR1SLC18A2SIGMAR1TSHRCYP3A4
SCHEMBL2103828 0.73 TSHR (0.38) TSHRCYP3A4KDM4EALOX15ALDH1A1
SCHEMBL11012885 0.73 TDP1 (0.34) TAAR1SLC18A2SIGMAR1TSHRCYP3A4
SCHEMBL2101246 0.72 ADRA2A (0.38) SIGMAR1HTR2AHRH1TSHRKDM4E
SCHEMBL2100308 0.72 TAAR1 (0.35) TAAR1SLC18A2SIGMAR1HTR2AHRH1
SCHEMBL2270138 0.71 KDM4E (0.41) TAAR1SLC18A2SIGMAR1HTR2AHRH1
SCHEMBL2102988 0.71 HTR2A (0.35) TAAR1HTR2AHRH1TSHRKDM4E
SCHEMBL8727777 0.71 LMNA (0.35) TAAR1SLC18A2SIGMAR1TSHRKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8404584-B2 Method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2013-03-26 US disclosed
US-8164166-B2 Interfacial roughness reducing film, wiring layer, semiconductor device, and method of manufacturing semiconductor device FUJITSU LIMITED (JP) 2012-04-24 US disclosed
US-20110207319-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-08-25 US disclosed
US-20090085170-A1 INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2009-04-02 US disclosed