Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 7/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
| ▸ | POLB | P06746 | 1/20 | 0.31 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Adamantane SCHEMBL21924976 | 0.82 | TDP1 (0.38) | HSD11B1 | |
| Adamantane SCHEMBL131439 | 0.82 | TDP1 (0.38) | HSD11B1 | |
| Adamantane SCHEMBL22115918 | 0.82 | TDP1 (0.38) | HSD11B1 | |
| Acrylic Acid SCHEMBL27139580 | 0.80 | LMNA (0.40) | HSD11B1 | |
| SCHEMBL40305 | 0.80 | ALDH1A1 (0.33) | HSD11B1SMN1; SMN2 | |
| SCHEMBL17352397 | 0.80 | ALDH1A1 (0.33) | HSD11B1SMN1; SMN2 | |
| Methacrylic Acid SCHEMBL2110242 | 0.79 | HSD11B1 (0.35) | HSD11B1SMN1; SMN2 | |
| Methacrylic Acid SCHEMBL28494575 | 0.79 | HSD11B1 (0.32) | HSD11B1 | |
| Methacrylic Acid SCHEMBL7083287 | 0.78 | HSD11B1 (0.35) | HSD11B1EPHX1 | |
| Bromide SCHEMBL7549895 | 0.78 | ALDH1A1 (0.32) | HSD11B1SMN1; SMN2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119613607-A | Preparation method of 193nm photoresist resin | 江苏集萃光敏电子材料研究所有限公司 | 2025-03-14 | — | — | CN | claimed |
| CN-114380937-B | Adamantane-containing photosensitive resin for black matrix photoresist, preparation method thereof, resin composition and application method thereof | 江苏博砚电子科技股份有限公司 | 2023-04-07 | — | — | CN | claimed |
| CN-114380937-A | Adamantane-containing photosensitive resin for black matrix photoresist, preparation method thereof, resin composition and application method thereof | 江苏博砚电子科技有限公司 | 2022-04-22 | — | — | CN | claimed |
| CN-108132584-B | Photoresist composition containing poly (p-hydroxystyrene) polymer and acrylate copolymer | 江苏汉拓光学材料有限公司 | 2020-12-08 | — | — | CN | claimed |
| CN-111072479-A | Method for purifying high-purity 2-methyl-2-adamantanol methacrylate | 宁波南大光电材料有限公司 | 2020-04-28 | — | — | CN | claimed |
| CN-119613607-A | Preparation method of 193nm photoresist resin | 江苏集萃光敏电子材料研究所有限公司 | 2025-03-14 | — | — | CN | disclosed |
| CN-113943391-B | Polymer resin and synthesis method thereof, photoresist containing polymer resin, preparation method of photoresist and use method of photoresist | 徐州博康信息化学品有限公司 | 2024-08-09 | — | — | CN | disclosed |
| CN-114380937-B | Adamantane-containing photosensitive resin for black matrix photoresist, preparation method thereof, resin composition and application method thereof | 江苏博砚电子科技股份有限公司 | 2023-04-07 | — | — | CN | disclosed |
| CN-114380937-A | Adamantane-containing photosensitive resin for black matrix photoresist, preparation method thereof, resin composition and application method thereof | 江苏博砚电子科技有限公司 | 2022-04-22 | — | — | CN | disclosed |
| CN-113943391-A | Polymer resin and synthesis method thereof, photoresist containing polymer resin, preparation method of photoresist and use method of photoresist | 江苏汉拓光学材料有限公司 | 2022-01-18 | — | — | CN | disclosed |
| CN-109679020-B | Cubane-containing acrylate film-forming resin and ArF photoresist as well as preparation method and photoetching method thereof | 厦门恒坤新材料科技股份有限公司 | 2020-12-29 | — | — | CN | disclosed |
| CN-108132584-B | Photoresist composition containing poly (p-hydroxystyrene) polymer and acrylate copolymer | 江苏汉拓光学材料有限公司 | 2020-12-08 | — | — | CN | disclosed |
| CN-111072479-A | Method for purifying high-purity 2-methyl-2-adamantanol methacrylate | 宁波南大光电材料有限公司 | 2020-04-28 | — | — | CN | disclosed |
| CN-111072479-A | Method for purifying high-purity 2-methyl-2-adamantanol methacrylate | 宁波南大光电材料有限公司 | 2020-04-28 | — | — | CN | disclosed |
| CN-111072479-A | Method for purifying high-purity 2-methyl-2-adamantanol methacrylate | 宁波南大光电材料有限公司 | 2020-04-28 | — | — | CN | disclosed |
| US-8158338-B2 | Resist sensitizer | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2012-04-17 | — | — | US | disclosed |
| WO-2010005428-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2010-01-14 | — | — | WO | disclosed |
| US-20100009289-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2010-01-14 | — | — | US | disclosed |
| US-7258963-B2 | Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern by using the photoresist composition | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-08-21 | — | — | US | disclosed |
| US-20060160019-A1 | Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern by using the photoresist composition | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-07-20 | — | — | US | disclosed |