SCHEMBL21183502

SCHEMBL21183502

CCC(C)(C)Oc1ccc(C2(c3ccc(Oc4ccc(-c5ccc(C(C)(C)CC)cc5)cc4)cc3)c3ccccc3-c3ccccc32)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 3/20 0.43
RAB9A P51151 3/20 0.43
MAPT P10636 2/20 0.43
POLB P06746 1/20 0.38
CYP2C9 P11712 1/20 0.38
LMNA P02545 2/20 0.36
SMN1; SMN2 Q16637 2/20 0.36
MAPK1 P28482 1/20 0.36
CASP3 P42574 1/20 0.36
ATM Q13315 1/20 0.36
SENP8 Q96LD8 1/20 0.36
SENP7 Q9BQF6 1/20 0.36
SENP6 Q9GZR1 1/20 0.36
PTPN1 P18031 1/20 0.35
KDM4E B2RXH2 1/20 0.35
MEN1 O00255 1/20 0.35
OPRK1 P41145 1/20 0.35
KMT2A Q03164 1/20 0.35
PPARG P37231 1/20 0.32
PPARA Q07869 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15869189 0.85 MEN1 (0.46) MAPTPOLBLMNASMN1; SMN2KDM4E
SCHEMBL21183493 0.80 ALDH1A1 (0.40) NPC1RAB9AMAPTPOLBLMNA
SCHEMBL12463907 0.80 SRD5A2 (0.35) NPC1RAB9AMAPTPOLBCYP2C9
SCHEMBL13818940 0.77 RAB9A (0.46) NPC1RAB9AMAPTPOLBCYP2C9
SCHEMBL12344570 0.77 CNR2 (0.39) MAPTCYP2C9LMNASMN1; SMN2KDM4E
SCHEMBL12969878 0.76 HTT (0.43) NPC1RAB9AMAPTPOLBCYP2C9
SCHEMBL13668495 0.76 HTT (0.43) NPC1RAB9AMAPTPOLBCYP2C9
SCHEMBL13329348 0.76 NPC1 (0.41) NPC1RAB9AMAPTPOLBCYP2C9
SCHEMBL19322845 0.75 MCL1 (0.33) MEN1KMT2AMCL1
SCHEMBL13818909 0.75 NPC1 (0.43) NPC1RAB9AMAPTPOLBCYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11339242-B2 Method for manufacturing semiconductor substrate having group-III nitride compound layer NISSAN CHEMICAL CORPORATION (JP) 2022-05-24 US disclosed
US-20190225731-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE HAVING GROUP-III NITRIDE COMPOUND LAYER NISSAN CHEMICAL CORPORATION (JP) 2019-07-25 US disclosed