SCHEMBL2138395

SCHEMBL2138395

O=C(OCCN1CCOCC1)C1CC2C=CC1C2

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ATM Q13315 1/20 0.44
ALDH1A1 P00352 7/20 0.42
KMT2A Q03164 3/20 0.41
LMNA P02545 1/20 0.41
L3MBTL1 Q9Y468 2/20 0.41
POLB P06746 1/20 0.41
APEX1 P27695 1/20 0.41
RECQL P46063 1/20 0.41
BLM P54132 1/20 0.41
ESR2 Q92731 1/20 0.41
HSD17B10 Q99714 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
GAA P10253 1/20 0.40
RAB9A P51151 1/20 0.40
BCHE P06276 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
MEN1 O00255 1/20 0.39
CYP1A2 P05177 1/20 0.39
CYP3A4 P08684 1/20 0.39
CYP2D6 P10635 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7742251 0.88 ALDH1A1 (0.43) ALDH1A1KMT2ALMNAL3MBTL1POLB
SCHEMBL7741447 0.86 ALDH1A1 (0.44) ALDH1A1KMT2ALMNAL3MBTL1POLB
SCHEMBL2138120 0.84 ALDH1A1 (0.40) ALDH1A1KMT2ALMNAL3MBTL1POLB
SCHEMBL12550842 0.83 ALDH1A1 (0.39) ALDH1A1KMT2ALMNAL3MBTL1POLB
SCHEMBL7742323 0.81 USP2 (0.43) ALDH1A1KMT2ALMNAL3MBTL1POLB
SCHEMBL2142283 0.81 ATM (0.48) ATMALDH1A1KMT2ALMNAL3MBTL1
SCHEMBL13897067 0.80 ALDH1A1 (0.53) ALDH1A1KMT2ALMNAL3MBTL1POLB
SCHEMBL14213298 0.80 ALDH1A1 (0.53) ALDH1A1KMT2ALMNAL3MBTL1POLB
SCHEMBL10388301 0.80 ALDH1A1 (0.53) ALDH1A1KMT2ALMNAL3MBTL1POLB
SCHEMBL5079282 0.80 ATM (0.42) ATMALDH1A1KMT2ALMNAL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6426171-B1 BICYCLIC PHOTORESIST MONOMER FOR POLYMER HAVING EXCELLENT ETCHING AND HEAT RESISTANCE AND ENHANCED POST EXPOSURE DELAY STABILITY HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2002-07-30 US claimed
US-20230152692-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20230152692-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20220004101-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-06 US disclosed
US-8148484-B2 Poly(bicyclo[2.2.1]hept-5-ene-2-carboxylic acid 2-(tert-butylamino)ethyl ester); Poly(bicyclo[2.2.1]hept-5-ene-2-carboxylic acid 2-(dimethylamino)ethyl ester); used for disinfecting, sterilizing, and preventing biofouling in closed or open industrial-water systems and cooling-water systems KE KELIT KUNSTSTOFFWERK GESMBH (AT) 2012-04-03 US disclosed
US-20080251460-A1 Biocidal Polymers KE KELIT KUNSTSTOFFWERK GESMBH (AT) 2008-10-16 US disclosed
US-6426171-B1 BICYCLIC PHOTORESIST MONOMER FOR POLYMER HAVING EXCELLENT ETCHING AND HEAT RESISTANCE AND ENHANCED POST EXPOSURE DELAY STABILITY HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2002-07-30 US disclosed