SCHEMBL215202

SCHEMBL215202

O=C1c2cccc3cccc(c23)C(=O)N1OS(=O)(=O)C(F)(F)F

nearest known ligand 0.64

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 10/20 0.64
KDM4E B2RXH2 8/20 0.64
HPGD P15428 7/20 0.64
KMT2A Q03164 7/20 0.64
MAPT P10636 6/20 0.64
MEN1 O00255 6/20 0.64
HTT P42858 1/20 0.64
LMNA P02545 1/20 0.56
THRB P10828 1/20 0.56
TDP1 Q9NUW8 1/20 0.47
ERCC1 P07992 1/20 0.46
FEN1 P39748 1/20 0.46
ERCC4 Q92889 1/20 0.46
CES2 O00748 1/20 0.44
BCHE P06276 1/20 0.44
CES1 P23141 1/20 0.44
MCL1 Q07820 1/20 0.44
HSD17B10 Q99714 2/20 0.43
NPSR1 Q6W5P4 1/20 0.43
CYP1A2 P05177 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29713407 1.00 ALDH1A1 (0.64) ALDH1A1KDM4EHPGDKMT2AMAPT
SCHEMBL24943444 0.91 ALDH1A1 (0.57) ALDH1A1KDM4EHPGDKMT2AMAPT
SCHEMBL2617101 0.88 ALDH1A1 (0.57) ALDH1A1KDM4EHPGDKMT2AMAPT
SCHEMBL16073097 0.88 ALDH1A1 (0.57) ALDH1A1KDM4EHPGDKMT2AMAPT
SCHEMBL20801131 0.87 MPO (0.57) ALDH1A1KDM4EHPGDKMT2AMAPT
SCHEMBL24943440 0.85 ALDH1A1 (0.55) ALDH1A1KDM4EHPGDKMT2AMAPT
SCHEMBL29368754 0.85 ALDH1A1 (0.61) ALDH1A1KDM4EHPGDKMT2AMAPT
SCHEMBL64157 0.85 ALDH1A1 (0.61) ALDH1A1KDM4EHPGDKMT2AMAPT
SCHEMBL28891823 0.85 ALDH1A1 (0.54) ALDH1A1KDM4EHPGDKMT2AMAPT
SCHEMBL13741778 0.84 ALDH1A1 (0.60) ALDH1A1KDM4EHPGDKMT2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 2267 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118567184-B Epoxy resin positive photoresist based on alkali deactivation mechanism and preparation method thereof 潍坊星泰克微电子材料有限公司 2024-10-29 CN claimed
CN-115368494-B Monomer copolymer containing hexafluoroisopropanol, preparation method thereof, chemical amplification type photoresist and application thereof 瑞红(苏州)电子化学品股份有限公司 2024-03-29 CN claimed
WO-2024045679-A1 ZN-BASED ORGANIC COORDINATION NANOPARTICLES AND PREPARATION METHOD THEREFOR, PHOTORESIST COMPOSITION, AND USE THEREOF 清华大学 2024-03-07 WO claimed
WO-2024046107-A1 ZN-BASED ORGANICALLY-COORDINATED NANOPARTICLES, PHOTORESIST COMPOSITION, PREPARATION METHOD THEREFOR, AND USE THEREOF 清华大学 2024-03-07 WO claimed
WO-2024046108-A1 ZN-BASED ORGANIC COORDINATION NANOPARTICLE AND PREPARATION METHOD THEREFOR, PHOTORESIST COMPOSITION CONTAINING SAME, AND USE THEREOF 清华大学 2024-03-07 WO claimed
WO-2023133943-A1 CROSS-LINKED POLYAMIC ACID ESTER AND PREPARATION METHOD THEREFOR, POLYIMIDE COMPOSITION COMPRISING SAME, AND METHOD FOR PREPARING POLYIMIDE RESIN FILM 深圳职业技术学院 2023-07-20 WO claimed
CN-116449651-A Polyimide positive photoresist based on alkali deactivation mechanism 潍坊星泰克微电子材料有限公司 2023-07-18 CN claimed
US-11675393-B2 Display device SAMSUNG DISPLAY CO., LTD. (KR) 2023-06-13 US claimed
WO-2023101104-A1 PHOTOCURABLE INK COMPOSITION AND OPTICAL PRINTING METHOD USING SAME 울산과학기술원 2023-06-08 WO claimed
WO-2023082371-A1 BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF 上海新阳半导体材料股份有限公司 2023-05-19 WO claimed
EP-2334714-A1 METHOD OF PHOTOCHEMICAL HYDROLYSIS-POLYCONDENSATION OF CROSS-LINKABLE CHROMOPHORES WITH STERIC HINDRANCE, CATALYSED BY A PHOTOGENERATED ACID, AND THE APPLICATIONS THEREOF Centre National de la Recherche Scientifique - CNRS (FR) 2011-06-22 EP claimed
WO-2010029273-A1 METHOD OF PHOTOCHEMICAL HYDROLYSIS-POLYCONDENSATION OF CROSS-LINKABLE CHROMOPHORES WITH STERIC HINDRANCE, CATALYSED BY A PHOTOGENERATED ACID, AND THE APPLICATIONS THEREOF CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS - (FR) 2010-03-18 WO claimed
CN-100383666-C Photoresist composition and method for forming photoresist pattern using the same HYNIX SEMICONDUCTOR INC (KR) 2008-04-23 CN claimed
CN-1619419-A Photoresist composition and method for forming photoresist pattern using the same HYNIX SEMICONDUCTOR INC (KR) 2005-05-25 CN claimed
CN-1603952-A Photoresist composition HYNIX SEMICONDUCTOR INC (KR) 2005-04-06 CN claimed
CN-1093645-C Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof NEC CORP (JP) 2002-10-30 CN claimed
US-6235446-B1 MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER JSR CORPORATION (JP) 2001-05-22 US claimed
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 US claimed
CN-1227355-A Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof NEC CORP (JP) 1999-09-01 CN claimed
US-5916728-A RESIN WHICH IS CONVERTED TO ALKALI-SOLUBLE FROM ALKALI-INSOLUBLE OR ALKALI-SLIGHTLY SOLUBLE BY THE ACTION OF AN ACID, ACID GENERATOR AND TERTIARY AMINE COMPOUND HAVING AN ALIPHATIC HYDROXYL GROUP. SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1999-06-29 US claimed