Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 11/20 | 0.61 |
| ▸ | KDM4E | B2RXH2 | 10/20 | 0.61 |
| ▸ | MAPT | P10636 | 9/20 | 0.61 |
| ▸ | KMT2A | Q03164 | 8/20 | 0.61 |
| ▸ | HPGD | P15428 | 7/20 | 0.61 |
| ▸ | MEN1 | O00255 | 5/20 | 0.56 |
| ▸ | VDR | P11473 | 3/20 | 0.51 |
| ▸ | F2 | P00734 | 4/20 | 0.47 |
| ▸ | HTT | P42858 | 3/20 | 0.47 |
| ▸ | XBP1 | P17861 | 2/20 | 0.47 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.47 |
| ▸ | LMNA | P02545 | 2/20 | 0.47 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.47 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.47 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.47 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.47 |
| ▸ | GAA | P10253 | 1/20 | 0.42 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.40 |
| ▸ | POLB | P06746 | 1/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29368754 | 1.00 | ALDH1A1 (0.61) | ALDH1A1KDM4EMAPTKMT2AHPGD | |
| SCHEMBL11291012 | 0.93 | ALDH1A1 (0.54) | ALDH1A1KDM4EMAPTKMT2AHPGD | |
| SCHEMBL2382168 | 0.86 | KDM4E (0.47) | ALDH1A1KDM4EMAPTKMT2AHPGD | |
| SCHEMBL215202 | 0.85 | ALDH1A1 (0.64) | ALDH1A1KDM4EMAPTKMT2AHPGD | |
| SCHEMBL29713407 | 0.85 | ALDH1A1 (0.64) | ALDH1A1KDM4EMAPTKMT2AHPGD | |
| SCHEMBL7134479 | 0.84 | KDM4E (0.52) | ALDH1A1KDM4EMAPTKMT2AHPGD | |
| SCHEMBL7642860 | 0.83 | ALDH1A1 (0.50) | ALDH1A1KDM4EMAPTKMT2AHPGD | |
| SCHEMBL382979 | 0.82 | PTGS2 (0.41) | ALDH1A1KDM4EMAPTKMT2AHPGD | |
| SCHEMBL1470558 | 0.82 | KMT2A (0.49) | ALDH1A1KDM4EMAPTKMT2AHPGD | |
| SCHEMBL14322543 | 0.82 | KMT2A (0.49) | ALDH1A1KDM4EMAPTKMT2AHPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2342 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250244664-A1 | PHOTORESIST COMPOSITIONS AND PATTERNING METHODS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2025-07-31 | — | — | US | claimed |
| US-20250102910-A1 | PHOTORESIST COMPOSITION AND METALLIZATION METHOD | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2025-03-27 | — | — | US | claimed |
| CN-115368494-B | Monomer copolymer containing hexafluoroisopropanol, preparation method thereof, chemical amplification type photoresist and application thereof | 瑞红(苏州)电子化学品股份有限公司 | 2024-03-29 | — | — | CN | claimed |
| CN-115368494-A | Hexafluoroisopropanol-containing monomer copolymer, preparation method thereof, chemical amplification type photoresist and application | 瑞红(苏州)电子化学品股份有限公司 | 2022-11-22 | — | — | CN | claimed |
| CN-114779577-A | Cyclodextrin inclusion compound molecular glass photoresist | 南通林格橡塑制品有限公司 | 2022-07-22 | — | — | CN | claimed |
| CN-113930151-B | Anti-reflective coating composition containing self-crosslinkable mercaptomelamine polymer, preparation method thereof and pattern forming method | 厦门恒坤新材料科技股份有限公司 | 2022-06-21 | — | — | CN | claimed |
| CN-114442429-A | Molecular glass photoresist of metallocene compound and preparation method thereof | 南通林格橡塑制品有限公司 | 2022-05-06 | — | — | CN | claimed |
| CN-113930151-A | Anti-reflective coating composition containing self-crosslinkable mercaptomelamine polymer, preparation method thereof and pattern forming method | 厦门恒坤新材料科技股份有限公司 | 2022-01-14 | — | — | CN | claimed |
| CN-108267933-B | Radiation-sensitive composition and patterning and metallization process | 罗门哈斯电子材料有限责任公司 | 2021-12-03 | — | — | CN | claimed |
| US-10962880-B2 | Radiation-sensitive compositions and patterning and metallization processes | ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) | 2021-03-30 | — | — | US | claimed |
| US-20020061466-A1 | Photoresist monomer, polymer thereof and photoresist composition containing the same | HYNIX SEMICONDUCTOR INC. (KR) | 2002-05-23 | — | — | US | claimed |
| US-20020061461-A1 | Photoresist polymer for top-surface imaging process by silylation and photoresist composition containing the same | HYNIX SEMICONDUCTOR INC. (KR) | 2002-05-23 | — | — | US | claimed |
| US-20020018960-A1 | Novel photoresist polymers, and photoresist compositions containing the same | HYNIX SEMICONDUCTOR INC. (KR) | 2002-02-14 | — | — | US | claimed |
| US-6235446-B1 | MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER | JSR CORPORATION (JP) | 2001-05-22 | — | — | US | claimed |
| US-6096478-A | Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern | NEC CORPORATION (JP) | 2000-08-01 | — | — | US | claimed |
| US-5994022-A | BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID | JSR CORPORATION (JP) | 1999-11-30 | — | — | US | claimed |
| CN-1227355-A | Photoresist material and method for producing semiconductor constituted of corrosion resist picture thereof | NEC CORP (JP) | 1999-09-01 | — | — | CN | claimed |
| US-5916728-A | RESIN WHICH IS CONVERTED TO ALKALI-SOLUBLE FROM ALKALI-INSOLUBLE OR ALKALI-SLIGHTLY SOLUBLE BY THE ACTION OF AN ACID, ACID GENERATOR AND TERTIARY AMINE COMPOUND HAVING AN ALIPHATIC HYDROXYL GROUP. | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1999-06-29 | — | — | US | claimed |
| WO-1993009474-A1 | PHOTOELECTROGRAPHIC ELEMENTS UTILIZING NONIONIC SULFONIC ACID PHOTOGENERATORS | EASTMAN KODAK COMPANY (US) | 1993-05-13 | — | — | WO | claimed |
| US-5204198-A | Consistent performance at variable relative humidities | EASTMAN KODAK COMPANY (US) | 1993-04-20 | — | — | US | claimed |