SCHEMBL216103

SCHEMBL216103

C=C(C)C(=O)OCc1cccc2cc3ccccc3cc12

nearest known ligand 0.46

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
MTNR1A P48039 11/20 0.46
MEN1 O00255 2/20 0.41
KMT2A Q03164 2/20 0.41
PARP10 Q53GL7 2/20 0.40
PARP15 Q460N3 1/20 0.40
KDM4E B2RXH2 1/20 0.40
ALDH1A1 P00352 1/20 0.40
GAA P10253 1/20 0.40
PPARG P37231 1/20 0.38
TACR1 P25103 1/20 0.38
MTNR1B P49286 7/20 0.38
HTR2C P28335 1/20 0.38
HTR2B P41595 1/20 0.38
EPHX1 P07099 1/20 0.38
SIRT5 Q9NXA8 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ammonia Solution, Strong SCHEMBL29224022 0.99 MTNR1A (0.45) MTNR1AMEN1KMT2APARP10PARP15
SCHEMBL1130685 0.87 KMT2A (0.50) MTNR1AMEN1KMT2APARP10PARP15
SCHEMBL27585843 0.85 ALDH1A1 (0.51) MTNR1AMEN1KMT2APARP10PARP15
SCHEMBL18470681 0.84 IDH1 (0.43) MTNR1AMEN1KMT2AMTNR1BEPHX1
SCHEMBL31506884 0.84 ALDH1A1 (0.40) MTNR1AALDH1A1TACR1MTNR1BSIRT5
SCHEMBL29503685 0.84 MTNR1A (0.44) MTNR1AMTNR1BHTR2CHTR2B
SCHEMBL31414083 0.83 KDM4E (0.41) MTNR1AMEN1KMT2AKDM4EALDH1A1
SCHEMBL29503732 0.83 MTNR1A (0.46) MTNR1AMTNR1B
SCHEMBL12903610 0.82 EPHX1 (0.39) MEN1KMT2AKDM4EALDH1A1GAA
SCHEMBL29224023 0.82 MTNR1A (0.43) MTNR1AMEN1KMT2APARP10PARP15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 372 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101880352-A Be used for multipolymer, its preparation method of gap filling material composition and be used for the gap filling material composition of antireflecting coating KOREA KUMHO PETROCHEM CO LTD 2010-11-10 CN claimed
US-7638388-B2 Method of forming a pattern and method of manufacturing a capacitor using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-12-29 US claimed
US-20080124911-A1 METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A CAPACITOR USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (JP) 2008-05-29 US claimed
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2026-04-30 US disclosed
EP-4715465-A1 MULTILAYER BODY, METHOD FOR PRODUCING MULTILAYER BODY, AND PHOTOSENSITIVE SURFACE MODIFIER Nissan Chemical Corporation (JP) 2026-03-25 EP disclosed
US-12585188-B2 Composition for forming resist underlying film NISSAN CHEMICAL CORPORATION (JP) 2026-03-24 US disclosed
EP-4679175-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM Nissan Chemical Corporation (JP) 2026-01-14 EP disclosed
US-20250377596-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 US disclosed
US-20250362609-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING POLYFUNCTIONAL SULFONIC ACID NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250361419-A1 COMPOSITION FOR FORMING COATING FILM FOR REMOVING FOREIGN MATTERS AND SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2025-11-27 US disclosed
US-20250355357-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2025-11-20 US disclosed
EP-1703328-A1 COMPOSITION FOR FORMING NITRIDE COATING FILM FOR HARD MASK Nissan Chemical Industries, Ltd. (JP) 2006-09-20 EP disclosed
US-20060204891-A1 Etching resistance; novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-09-14 US disclosed
CN-1830202-A Composition for forming lower layer film for lithography comprising compound having protected carboxyl group NISSAN CHEMICAL IND LTD (JP) 2006-09-06 CN disclosed
EP-1662769-A1 COMPOSITION FOR FORMING LOWER LAYER FILM FOR LITHOGRAPHY COMPRISING COMPOUND HAVING PROTECTED CARBOXYL GROUP Nissan Chemical Industries, Ltd. (JP) 2006-05-31 EP disclosed
CN-1774673-A Porous underlayer film and underlayer film forming composition used for forming the same NISSAN CHEMICAL IND LTD (JP) 2006-05-17 CN disclosed
CN-1768306-A Underlayer coating forming composition for lithography containing epoxy compound and carboxylic acid compound NISSAN CHEMICAL IND LTD (JP) 2006-05-03 CN disclosed
EP-1619555-A1 POROUS UNDERLAYER FILM AND UNDERLAYER FILM FORMING COMPOSITION USED FOR FORMING THE SAME Nissan Chemical Industries, Ltd. (JP) 2006-01-25 EP disclosed
EP-1617289-A1 COMPOSITION FOR FORMATION OF UNDERLAYER FILM FOR LITHOGRAPHY CONTAINING EPOXY COMPOUND AND CARBOXYLIC ACID COMPOUND Nissan Chemical Industries, Ltd. (JP) 2006-01-18 EP disclosed
EP-0373687-A1 Method for the photochemical conversion of tachysterol compounds into previtamin D compounds and of trans-vitamin D compounds into cis-vitamin D compounds DUPHAR INTERNATIONAL RESEARCH B.V (NL) 1990-06-20 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260118764-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND SILICON-CONTAINING RESIST UNDERLAYER FILM SRSF1, MACF1, SRPK1 MTNR1A 3795/4885MEN1 2480/4885KMT2A 111/4885
US-12585188-B2 Composition for forming resist underlying film SRR, SMC1A, ASH2L MTNR1A 3411/4885MEN1 1625/4885KMT2A 1145/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.