Known targets — ChEMBL curated mechanism
ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ABL1 known ✓ | P00519 | 1/20 | 0.33 |
| ▸ | CRBN | Q96SW2 | 5/20 | 0.65 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | OR51E2 | Q9H255 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.34 |
| ▸ | PKM | P14618 | 1/20 | 0.34 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | FKBP5 | Q13451 | 1/20 | 0.33 |
| ▸ | RIN1 | Q13671 | 1/20 | 0.33 |
| ▸ | IDO1 | P14902 | 1/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | TP53 | P04637 | 1/20 | 0.30 |
| ▸ | TOP2A | P11388 | 1/20 | 0.30 |
| ▸ | TOP2B | Q02880 | 1/20 | 0.30 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Succinimide SCHEMBL216817 | 0.90 | CRBN (0.61) | CRBNMAPTALDH1A1PKMCYP2C19 | |
| Sulfuric Acid SCHEMBL6537451 | 0.90 | CRBN (0.72) | CRBNMAPTOR51E2ALDH1A1CYP2C19 | |
| Sulfuric Acid SCHEMBL5145399 | 0.90 | CRBN (0.72) | CRBNMAPTOR51E2ALDH1A1CYP2C19 | |
| Methyl Alcohol SCHEMBL28109851 | 0.84 | CRBN (0.81) | CRBNMAPTOR51E2ALDH1A1CYP2C19 | |
| SCHEMBL6537449 | 0.81 | CRBN (0.59) | CRBNMAPTOR51E2ALDH1A1FKBP5 | |
| SCHEMBL26618 | 0.81 | — | — | |
| SCHEMBL5778743 | 0.81 | CRBN (1.00) | CRBNMAPTOR51E2ALDH1A1CYP2C19 | |
| Succinimide SCHEMBL27863987 | 0.78 | CRBN (0.69) | CRBNPKM | |
| Succinimide SCHEMBL30302994 | 0.78 | CRBN (0.69) | CRBNPKM | |
| Ammonia Solution, Strong SCHEMBL10590100 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12258341-B2 | IRAK degraders and uses thereof | KYMERA THERAPEUTICS, INC. (US) | 2025-03-25 | — | — | US | disclosed |
| US-20240239777-A1 | IRAK DEGRADERS AND USES THEREOF | KYMERA THERAPEUTICS, INC. | 2024-07-18 | — | — | US | disclosed |
| CN-106094440-B | Lower layer film for lithography forming material, lower layer film for lithography and pattern forming method | 三菱瓦斯化学株式会社 | 2019-11-22 | — | — | CN | disclosed |
| CN-106062630-B | Photopolymerizable compositions for electroless plating processes | 伊斯曼柯达公司 | 2019-11-05 | — | — | CN | disclosed |
| CN-106459650-B | Latex primer composition and latex primer coated substrate | 伊斯曼柯达公司 | 2019-05-10 | — | — | CN | disclosed |
| CN-104281006-B | Radiation-ray sensitive composition | 三菱瓦斯化学株式会社 | 2019-01-22 | — | — | CN | disclosed |
| CN-106795384-A | Carbon coated metallic particles, article and the purposes being dispersed through | 柯达公司 | 2017-05-31 | — | — | CN | disclosed |
| CN-106575083-A | Underlayer film-forming composition for lithography, underlayer film for lithography, and pattern forming method | 三菱瓦斯化学株式会社 | 2017-04-19 | — | — | CN | disclosed |
| CN-106459650-A | Latex primer composition and latex primer coated substrate | 伊斯曼柯达公司 | 2017-02-22 | — | — | CN | disclosed |
| CN-106462072-A | Lithographic film formation material, composition for lithographic film formation, lithographic film, pattern formation method, and purification method | 三菱瓦斯化学株式会社 | 2017-02-22 | — | — | CN | disclosed |
| US-7214743-B2 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-08 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7169541-B2 | Compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-01-30 | — | — | US | disclosed |
| US-20060234158-A1 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-10-19 | — | — | US | disclosed |
| US-20060147836-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-07-06 | — | — | US | disclosed |
| US-20050079446-A1 | Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050079440-A1 | Novel polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050014092-A1 | Novel compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-20 | — | — | US | disclosed |
| US-20040259037-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-23 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12258341-B2 | IRAK degraders and uses thereof | IRAK2, IRAK3, IRAK1 | ABL1 521/4885CRBN 187/4885MAPT 2459/4885 |
| US-20240239777-A1 | IRAK DEGRADERS AND USES THEREOF | IRAK2, IRAK3, IRAK1 | ABL1 521/4885CRBN 187/4885MAPT 2459/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.