SCHEMBL217504

SCHEMBL217504

O=C1CCCC(=O)N1.O=S(=O)(O)c1ccccc1

nearest known ligand 0.59

Known targets — ChEMBL curated mechanism

BTKCACNA1CCACNA1DCACNA1FCACNA1SCACNA2D1CACNA2D2DRD2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQHRH1HTR2AP2RY12

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.59
SMN1; SMN2 Q16637 1/20 0.59
CRBN Q96SW2 4/20 0.48
MAPT P10636 5/20 0.46
CYP2C19 P33261 2/20 0.45
CYP3A4 P08684 1/20 0.45
CYP2C9 P11712 1/20 0.45
POLB P06746 2/20 0.43
CYP2D6 P10635 1/20 0.43
ALDH1A1 P00352 3/20 0.41
GAA P10253 2/20 0.41
DDB1 Q16531 2/20 0.41
MCOLN3 Q8TDD5 1/20 0.40
ALOX5 P09917 1/20 0.40
PTPRA P18433 1/20 0.39
PTPRB P23467 1/20 0.39
PARL Q9H300 2/20 0.39
LMNA P02545 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Succinimide SCHEMBL217833 0.92 TSHR (0.64) TSHRSMN1; SMN2CRBNMAPTCYP2C19
Succinimide SCHEMBL29249628 0.84 TSHR (0.53) TSHRSMN1; SMN2CRBNMAPTCYP2C19
2-Pyrrolidone SCHEMBL29289950 0.82 TSHR (0.55) TSHRSMN1; SMN2CRBNMAPTCYP2C19
Cyclohexane SCHEMBL18585697 0.80 TSHR (0.84) TSHRSMN1; SMN2CYP2C19POLBCYP2D6
Cyclopropane SCHEMBL2101078 0.80 TSHR (0.84) TSHRSMN1; SMN2CYP2C19POLBCYP2D6
Azetidine SCHEMBL28177662 0.78 TSHR (0.73) TSHRSMN1; SMN2CYP2C19CYP3A4CYP2C9
Phosphine SCHEMBL27770571 0.78 TSHR (0.80) TSHRSMN1; SMN2CYP2C19POLBCYP2D6
Sulfuric Acid SCHEMBL6537451 0.77 CRBN (0.72) TSHRCRBNMAPTCYP2C19ALDH1A1
Sulfuric Acid SCHEMBL5145399 0.77 CRBN (0.72) TSHRCRBNMAPTCYP2C19ALDH1A1
SCHEMBL597672 0.77 TSHR (1.00) TSHRSMN1; SMN2CYP2C19POLBCYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119731179-A IKZF2 degradation agent and application thereof 密歇根大学董事会 2025-03-28 CN disclosed
EP-4499649-A1 IKZF2 DEGRADERS AND USES THEREOF Regents of the University of Michigan (US) 2025-02-05 EP disclosed
WO-2024192064-A1 COMPOUNDS AND COMPOSITIONS AS SMARCA2/4 DEGRADERS AND USES THEREOF ONCOPIA THERAPEUTICS, INC. D/B/A/ PROTEOVANT THERAPEUTICS, INC. (US) 2024-09-19 WO disclosed
WO-2024015340-A1 CEREBLON LIGANDS AND USES THEREOF REGENTS OF THE UNIVERSITY OF MICHIGAN (US) 2024-01-18 WO disclosed
WO-2023183540-A1 IKZF2 DEGRADERS AND USES THEREOF REGENTS OF THE UNIVERSITY OF MICHIGAN (US) 2023-09-28 WO disclosed
CN-104969127-B Compound, lower layer film for lithography forming material, lower layer film for lithography and pattern forming method 三菱瓦斯化学株式会社 2019-11-26 CN disclosed
CN-106094440-B Lower layer film for lithography forming material, lower layer film for lithography and pattern forming method 三菱瓦斯化学株式会社 2019-11-22 CN disclosed
CN-106062630-B Photopolymerizable compositions for electroless plating processes 伊斯曼柯达公司 2019-11-05 CN disclosed
CN-106459650-B Latex primer composition and latex primer coated substrate 伊斯曼柯达公司 2019-05-10 CN disclosed
CN-104718202-B The method for being used to prepare (S) -3- (4- ((4- (morpholinyl methyl) benzyl) oxygroup) -1- oxoisoindolines -2- base) piperidine-2,6-diones and its pharmaceutically acceptable form 细胞基因公司 2018-11-20 CN disclosed
US-20070128886-A1 Substrate, method for producing the same, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-07 US disclosed
US-20070117411-A1 Rework process for photoresist film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-24 US disclosed
EP-1788436-A1 Rework process for photoresist film Shin-Etsu Chemical Company, Ltd. (JP) 2007-05-23 EP disclosed
EP-1788437-A2 Rework process for photoresist film Shinetsu Chemical Co., Ltd. (JP) 2007-05-23 EP disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20070111134-A1 solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed