Succinimide

Succinimide

SCHEMBL217833

O=C1CCC(=O)N1.O=S(=O)(O)c1ccccc1

nearest known ligand 0.64

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

BTKCACNA1CCACNA1DCACNA1FCACNA1SCACNA2D1CACNA2D2DRD2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQHRH1HTR2AP2RY12

The experimentally established mechanism targets of Succinimide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.64
SMN1; SMN2 Q16637 1/20 0.64
MAPT P10636 3/20 0.47
CYP2C19 P33261 2/20 0.47
CYP3A4 P08684 1/20 0.47
CYP2C9 P11712 1/20 0.47
POLB P06746 2/20 0.46
CYP2D6 P10635 1/20 0.46
CRBN Q96SW2 5/20 0.45
DDB1 Q16531 3/20 0.43
NPC1 O15118 1/20 0.42
MAPK13 O15264 1/20 0.42
MAPK12 P53778 1/20 0.42
MAPK11 Q15759 1/20 0.42
MAPK14 Q16539 1/20 0.42
PARL Q9H300 2/20 0.41
PTPRA P18433 1/20 0.41
PTPRB P23467 1/20 0.41
ALDH1A1 P00352 3/20 0.41
LMNA P02545 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL217504 0.92 TSHR (0.59) TSHRSMN1; SMN2MAPTCYP2C19CYP3A4
Succinimide SCHEMBL29249628 0.91 TSHR (0.53) TSHRSMN1; SMN2MAPTCYP2C19CYP3A4
SCHEMBL5850190 0.82 TSHR (0.94) TSHRSMN1; SMN2CYP2C19POLBCYP2D6
Succinimide SCHEMBL8490587 0.81 TSHR (0.67) TSHRSMN1; SMN2CYP3A4CYP2C9CRBN
Succinimide SCHEMBL217831 0.81 MAPT (0.50) TSHRSMN1; SMN2MAPTPOLBCYP2D6
Benzene SCHEMBL9751882 0.80 TSHR (1.00) TSHRSMN1; SMN2CYP2C19POLBCYP2D6
SCHEMBL3409457 0.80 TSHR (1.00) TSHRSMN1; SMN2CYP2C19POLBCYP2D6
SCHEMBL2509 0.80 TSHR (1.00) TSHRSMN1; SMN2CYP2C19POLBCYP2D6
SCHEMBL597672 0.80 TSHR (1.00) TSHRSMN1; SMN2CYP2C19POLBCYP2D6
SCHEMBL30671620 0.80 TSHR (1.00) TSHRSMN1; SMN2CYP2C19POLBCYP2D6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 54 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2687548-B1 ORGANIC/INORGANIC COMPOSITE, MANUFACTURING METHOD THEREFOR, ORGANIC/INORGANIC COMPOSITE FILM, MANUFACTURING METHOD THEREFOR, PHOTONIC CRYSTAL, COATING MATERIAL, THERMOPLASTIC COMPOSITION, MICROSTRUCTURE, OPTICAL MATERIAL, ANTIREFLECTION MEMBER, AND OPTICAL LENS ASAHI CHEMICAL IND (JP) 2019-07-31 EP disclosed
CN-107250089-A Compound, resin, lower layer film for lithography formation material, lower layer film for lithography form the purification process with composition, lower layer film for lithography, corrosion-resisting pattern forming method, circuit pattern forming method and compound or resin 三菱瓦斯化学株式会社 2017-10-13 CN disclosed
US-20150037535-A1 Organic/Inorganic Composite, Manufacturing Method Therefor, Organic/Inorganic Composite Film, Manufacturing Method Therefor, Photonic Crystal, Coating Material, Thermoplastic Composition, Microstructure, Optical Material, Antireflection Member, and Optical Lens ASAHI KASEI CHEMICALS CORPORATION (JP) 2015-02-05 US disclosed
US-8809458-B2 Polysiloxane composition KANEKA CORPORATION (JP) 2014-08-19 US disclosed
EP-2687548-A1 ORGANIC/INORGANIC COMPOSITE, MANUFACTURING METHOD THEREFOR, ORGANIC/INORGANIC COMPOSITE FILM, MANUFACTURING METHOD THEREFOR, PHOTONIC CRYSTAL, COATING MATERIAL, THERMOPLASTIC COMPOSITION, MICROSTRUCTURE, OPTICAL MATERIAL, ANTIREFLECTION MEMBER, AND OPTICAL LENS Asahi Kasei Chemicals Corporation (JP) 2014-01-22 EP disclosed
EP-1788436-B1 Rework process for photoresist film SHINETSU CHEMICAL CO (JP) 2013-01-09 EP disclosed
EP-1813985-B1 Antireflection film composition, substrate, and pattering process SHINETSU CHEMICAL CO (JP) 2012-10-31 EP disclosed
US-8288072-B2 Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-8088554-B2 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD (JP) 2012-01-03 US disclosed
US-7868407-B2 Substrate comprising a lower silicone resin film and an upper silicone resin film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-11 US disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed
EP-1720063-A1 Resin containing ketene-aldehyde copolymer NIPPON SODA CO., LTD. (JP) 2006-11-08 EP disclosed
US-20060234158-A1 Bottom resist layer composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-10-19 US disclosed
US-7105272-B2 Acid-degradable resin compositions containing ketene-aldehyde copolymer NIPPON SODA CO., LTD. (JP) 2006-09-12 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-7029827-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-04-18 US disclosed
US-20050130057-A1 Acid-degradable resin compositions containing ketene-aldehyde copolymer NIPPON SODA CO., LTD. (JP) 2005-06-16 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
EP-1482361-A1 ACID-DEGRADABLE RESIN COMPOSITIONS CONTAINING KETENE-ALDEHYDE COPOLYMER NIPPON SODA CO., LTD. (JP) 2004-12-01 EP disclosed
US-6156476-A Positive photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2000-12-05 US disclosed