Known targets — ChEMBL curated mechanism
ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol
The experimentally established mechanism targets of Phthalimide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAOB known ✓ | P27338 | 1/20 | 0.45 |
| ▸ | EGFR known ✓ | P00533 | 1/20 | 0.42 |
| ▸ | GSK3B | P49841 | 1/20 | 0.68 |
| ▸ | CASP3 | P42574 | 4/20 | 0.64 |
| ▸ | CASP2 | P42575 | 1/20 | 0.64 |
| ▸ | CASP7 | P55210 | 1/20 | 0.64 |
| ▸ | CASP6 | P55212 | 1/20 | 0.64 |
| ▸ | CASP8 | Q14790 | 1/20 | 0.64 |
| ▸ | MEN1 | O00255 | 5/20 | 0.47 |
| ▸ | KMT2A | Q03164 | 5/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.47 |
| ▸ | HPGD | P15428 | 4/20 | 0.47 |
| ▸ | LMNA | P02545 | 4/20 | 0.47 |
| ▸ | MAPT | P10636 | 3/20 | 0.47 |
| ▸ | BLM | P54132 | 3/20 | 0.47 |
| ▸ | APAF1 | O14727 | 1/20 | 0.47 |
| ▸ | THRB | P10828 | 1/20 | 0.47 |
| ▸ | PARP1 | P09874 | 2/20 | 0.45 |
| ▸ | MAOA | P21397 | 1/20 | 0.45 |
| ▸ | PDGFRA | P16234 | 1/20 | 0.45 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phthalimide SCHEMBL7164645 | 1.00 | GSK3B (0.68) | GSK3BCASP3CASP2CASP7CASP6 | |
| Phthalimide SCHEMBL29217853 | 0.91 | GSK3B (0.75) | GSK3BCASP3CASP2CASP7CASP6 | |
| Phthalimide SCHEMBL27968411 | 0.91 | GSK3B (0.75) | GSK3BCASP3CASP2CASP7CASP6 | |
| Phthalimide SCHEMBL28035222 | 0.86 | GSK3B (0.68) | GSK3BCASP3CASP2CASP7CASP6 | |
| Phthalimide SCHEMBL28035221 | 0.86 | GSK3B (0.68) | GSK3BCASP3CASP2CASP7CASP6 | |
| Phthalimide SCHEMBL3220884 | 0.86 | GSK3B (0.68) | GSK3BCASP3CASP2CASP7CASP6 | |
| Phthalimide SCHEMBL23063638 | 0.83 | GSK3B (0.88) | GSK3BCASP3CASP2CASP7CASP6 | |
| Phthalimide SCHEMBL64 | 0.83 | GSK3B (1.00) | GSK3BCASP3CASP2CASP7CASP6 | |
| Phthalimide SCHEMBL29366030 | 0.83 | GSK3B (1.00) | GSK3BCASP3CASP2CASP7CASP6 | |
| Phthalimide SCHEMBL11040503 | 0.83 | GSK3B (1.00) | GSK3BCASP3CASP2CASP7CASP6 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6096478-A | Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern | NEC CORPORATION (JP) | 2000-08-01 | — | — | US | claimed |
| CN-107924131-A | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, method for producing same, and method for forming resist pattern | 三菱瓦斯化学株式会社 | 2018-04-17 | — | — | CN | disclosed |
| CN-107533297-A | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, and pattern formation method | 三菱瓦斯化学株式会社 | 2018-01-02 | — | — | CN | disclosed |
| CN-107430344-A | Lower layer film for lithography, which forms to be formed with material, lower layer film for lithography, uses composition, lower layer film for lithography and pattern formation method | 三菱瓦斯化学株式会社 | 2017-12-01 | — | — | CN | disclosed |
| CN-106575083-A | Underlayer film-forming composition for lithography, underlayer film for lithography, and pattern forming method | 三菱瓦斯化学株式会社 | 2017-04-19 | — | — | CN | disclosed |
| CN-106103396-A | Compound, resin, lower layer film for lithography form material, lower layer film for lithography, pattern formation method and compound or the purification process of resin | 三菱瓦斯化学株式会社 | 2016-11-09 | — | — | CN | disclosed |
| EP-1788436-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2013-01-09 | — | — | EP | disclosed |
| EP-1813985-B1 | Antireflection film composition, substrate, and pattering process | SHINETSU CHEMICAL CO (JP) | 2012-10-31 | — | — | EP | disclosed |
| US-8288072-B2 | Antireflection film; fast etching speed whcih reduces deformation; accuracy; 2,3-epoxypropyl methacrylate ester-styrene copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-16 | — | — | US | disclosed |
| US-8088554-B2 | Bottom resist layer composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2012-01-03 | — | — | US | disclosed |
| US-20050079446-A1 | Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-04-14 | — | — | US | disclosed |
| US-20050014092-A1 | Novel compound, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-01-20 | — | — | US | disclosed |
| US-20040259037-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-23 | — | — | US | disclosed |
| US-20040241577-A1 | Resist lower layer film material and method for forming a pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-02 | — | — | US | disclosed |
| EP-1482361-A1 | ACID-DEGRADABLE RESIN COMPOSITIONS CONTAINING KETENE-ALDEHYDE COPOLYMER | NIPPON SODA CO., LTD. (JP) | 2004-12-01 | — | — | EP | disclosed |
| US-20020028943-A1 | Multibinding inhibitors of microsomal triglyceride transferase protein | THERAVANCE BIOPHARMA R&D IP, LLC | 2002-03-07 | — | — | US | disclosed |
| US-6288234-B1 | FLUORINATED HETEROCYCLIC AMIDO AMINE COMPOUNDS AS DRUGS | ADVANCED MEDICINE, INC. | 2001-09-11 | — | — | US | disclosed |
| EP-1085846-A2 | MULTIBINDING INHIBITORS OF MICROSOMAL TRIGLYCERIDE TRANSFERASE PROTEIN | Advanced Medicine, Inc. (US) | 2001-03-28 | — | — | EP | disclosed |
| WO-1999063929-A9 | MULTIBINDING INHIBITORS OF MICROSOMAL TRIGLYCERIDE TRANSFERASE PROTEIN | ADVANCED MEDICINE INC (US) | 2000-03-16 | — | — | WO | disclosed |
| WO-1999063929-A2 | MULTIBINDING INHIBITORS OF MICROSOMAL TRIGLYCERIDE TRANSFERASE PROTEIN | ADVANCED MEDICINE, INC. (US) | 1999-12-16 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20020028943-A1 | Multibinding inhibitors of microsomal triglyceride transferase protein | MTTP, CETP, HDLBP | MAOB 1607/4885EGFR 4755/4885GSK3B 3060/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.