SCHEMBL21783789

SCHEMBL21783789

O=C(O)c1c(I)ccc(I)c1O

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
DPP4 P27487 2/20 0.43
CA12 O43570 4/20 0.42
CA1 P00915 4/20 0.42
CA2 P00918 4/20 0.42
CA7 P43166 4/20 0.42
CA9 Q16790 4/20 0.42
CA14 Q9ULX7 4/20 0.42
TPMT P51580 2/20 0.37
GLRA3 O75311 1/20 0.35
GLRB P48167 1/20 0.35
SELL P14151 2/20 0.34
SELP P16109 2/20 0.34
LDHA P00338 2/20 0.33
LDHB P07195 2/20 0.33
TP53 P04637 2/20 0.33
CA3 P07451 2/20 0.33
CA4 P22748 2/20 0.33
CA6 P23280 2/20 0.33
CA5A P35218 2/20 0.33
CA5B Q9Y2D0 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19200647 0.86 SELL (0.46) DPP4CA12CA1CA2CA7
SCHEMBL4849716 0.77 TPMT (0.42) DPP4CA12CA1CA2CA7
SCHEMBL23600933 0.76 CA1 (0.44) DPP4CA12CA1CA2CA7
SCHEMBL4851263 0.74 CA12 (0.52) CA12CA1CA2CA7CA9
SCHEMBL28106442 0.73 CYP1A2 (0.46) CA12CA1CA2CA7CA9
SCHEMBL18585486 0.73 SELL (0.60) CA12CA1CA2CA7CA9
SCHEMBL24040210 0.73 PDE10A (0.37) CA12CA1CA2CA7CA9
SCHEMBL19730668 0.71 CA12 (0.44) DPP4CA12CA1CA2CA7
SCHEMBL23600928 0.71 TPMT (0.48) DPP4CA12CA1CA2CA7
SCHEMBL21783790 0.71 TPMT (0.48) DPP4CA12CA1CA2CA7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250214921-A1 METHOD FOR PRODUCING CYCLIC DIKETONE COMPOUND KAO CORPORATION (JP) 2025-07-03 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
WO-2023223624-A1 RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, RADIATION SENSITIVE ACID GENERATOR, AND ACID DIFFUSION CONTROL AGENT JSR株式会社 2023-11-23 WO disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 US disclosed
US-11774853-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 US disclosed
WO-2023013592-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN 東京応化工業株式会社 2023-02-09 WO disclosed
US-11415887-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-08-16 US disclosed
US-20220121117-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND RESIN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-04-21 US disclosed
US-20220121116-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2022-04-21 US disclosed
US-11187980-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-11-30 US disclosed
US-11181823-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-11-23 US disclosed
US-20210302838-A1 RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-09-30 US disclosed
US-20200272048-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-08-27 US disclosed
US-20200241414-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-30 US disclosed
US-20200241418-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-07-30 US disclosed
US-20200192222-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-06-18 US disclosed
US-20200073237-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-03-05 US disclosed
CN-104070307-B Solder flux composition and solder composition 株式会社田村制作所 2018-02-23 CN disclosed
CN-104070307-A FLUX COMPOSITION AND SOLDER COMPOSITION TAMURA SEISAKUSHO KK 2014-10-01 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200241414-A1 RESIST COMPOSITION AND PATTERNING PROCESS INSR, HNRNPU, HNRNPR DPP4 3142/4885CA12 2165/4885CA1 2684/4885
US-20250214921-A1 METHOD FOR PRODUCING CYCLIC DIKETONE COMPOUND HSD17B7, HSD17B12, BCKDK DPP4 2461/4885CA12 2616/4885CA1 2942/4885
US-11181823-B2 Resist composition and patterning process BICRA, HNRNPU, INSR DPP4 3752/4885CA12 2292/4885CA1 3165/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.