SCHEMBL21794099

SCHEMBL21794099

CC(=O)Oc1ccc(-c2cc(-c3ccc(OC(C)=O)cc3)c(S(=O)(=O)O)c(-c3ccc(OC(C)=O)cc3)c2)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ HSD17B10 Q99714 1/20 0.50
▸ MAPT P10636 3/20 0.49
▸ POLB P06746 2/20 0.49
▸ PKM P14618 1/20 0.49
▸ LMNA P02545 3/20 0.47
▸ GAA P10253 1/20 0.47
▸ BACE1 P56817 4/20 0.46
▸ GAPDH P04406 1/20 0.45
▸ KDM4E B2RXH2 1/20 0.44
▸ MEN1 O00255 1/20 0.44
▸ TTR P02766 1/20 0.44
▸ TP53 P04637 1/20 0.44
▸ CYP3A4 P08684 1/20 0.44
▸ KMT2A Q03164 1/20 0.44
▸ SMN1; SMN2 Q16637 1/20 0.44
▸ TDP1 Q9NUW8 1/20 0.43
▸ PTGS2 P35354 1/20 0.43
▸ MAOB P27338 1/20 0.42
▸ ADORA3 P0DMS8 1/20 0.41
▸ ELANE P08246 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21794143 0.84 KMT2A (0.37) HSD17B10MAPTPOLBPKMLMNA
SCHEMBL21794146 0.82 SMN1; SMN2 (0.50) BACE1KDM4ETP53SMN1; SMN2PTGS2
SCHEMBL21794138 0.81 ELANE (0.50) HSD17B10LMNAGAABACE1ELANE
SCHEMBL23432890 0.81 KIF11 (0.38) HSD17B10BACE1ELANECA2
SCHEMBL26057589 0.80 HSD17B10 (0.56) HSD17B10MAPTPOLBPKMLMNA
SCHEMBL9544647 0.79 HSD17B10 (0.68) HSD17B10MAPTPOLBPKMLMNA
SCHEMBL21794096 0.78 PDE5A (0.36) TP53SMN1; SMN2CA2
SCHEMBL9158246 0.77 HSD17B10 (0.76) HSD17B10MAPTPOLBPKMLMNA
SCHEMBL329365 0.77 HSD17B10 (0.76) HSD17B10MAPTPOLBPKMLMNA
SCHEMBL24995338 0.76 ERN1 (0.36) PKMGAATP53SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023162837-A1 POSITIVE ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND COMPOUND 富士フイルム株式会社 2023-08-31 — — WO disclosed
WO-2023162838-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2023-08-31 — — WO disclosed
WO-2023008347-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE 富士フイルム株式会社 2023-02-02 — — WO disclosed
US-20210165325-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2021-06-03 — — US disclosed
WO-2020045534-A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND 富士フイルム株式会社 2020-03-05 — — WO disclosed
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