SCHEMBL23432890

SCHEMBL23432890

O=C(Oc1ccc(-c2cc(-c3ccc(OC(=O)C(F)(F)F)cc3)c(S(=O)(=O)O)c(-c3ccc(OC(=O)C(F)(F)F)cc3)c2)cc1)C(F)(F)F

nearest known ligand 0.38

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ KIF11 P52732 2/20 0.38
▸ ELANE P08246 7/20 0.36
▸ AURKA O14965 1/20 0.33
▸ TPX2 Q9ULW0 1/20 0.33
▸ AKR1C2 P52895 1/20 0.32
▸ AKR1C1 Q04828 1/20 0.32
▸ BACE1 P56817 1/20 0.31
▸ CA2 P00918 3/20 0.31
▸ CA1 P00915 1/20 0.31
▸ PTPN1 P18031 1/20 0.31
▸ HSD17B10 Q99714 1/20 0.30
▸ IKBKB O14920 1/20 0.30
▸ CHUK O15111 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21794099 0.81 HSD17B10 (0.50) ELANEBACE1CA2HSD17B10
SCHEMBL21794138 0.78 ELANE (0.50) KIF11ELANEBACE1CA2CA1
SCHEMBL21794146 0.75 SMN1; SMN2 (0.50) BACE1CA2CA1
SCHEMBL21794143 0.75 KMT2A (0.37) BACE1HSD17B10
SCHEMBL14155779 0.75 ELANE (0.51) ELANECA2CA1
SCHEMBL21794096 0.75 PDE5A (0.36) KIF11AURKATPX2CA2CA1
SCHEMBL21794266 0.74 ESR1 (0.50) HSD17B10
SCHEMBL9543659 0.73 HDAC1 (0.50) KIF11ELANE
SCHEMBL24995588 0.70 KIF11 (0.44) KIF11AKR1C2BACE1CA2CA1
SCHEMBL24995338 0.70 ERN1 (0.36) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023162837-A1 POSITIVE ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND COMPOUND 富士フイルム株式会社 2023-08-31 — — WO disclosed
WO-2023162838-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2023-08-31 — — WO disclosed
US-20210165325-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2021-06-03 — — US disclosed
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