Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.46 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.46 |
| ▸ | PTGS2 | P35354 | 1/20 | 0.45 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.44 |
| ▸ | HPGD | P15428 | 1/20 | 0.44 |
| ▸ | BCL2L1 | Q07817 | 1/20 | 0.44 |
| ▸ | HNF4A | P41235 | 1/20 | 0.44 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.43 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.43 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.43 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.43 |
| ▸ | BCAT2 | O15382 | 1/20 | 0.42 |
| ▸ | BACE1 | P56817 | 1/20 | 0.41 |
| ▸ | DAPK1 | P53355 | 1/20 | 0.41 |
| ▸ | PDCD1 | Q15116 | 1/20 | 0.39 |
| ▸ | CD274 | Q9NZQ7 | 1/20 | 0.39 |
| ▸ | P2RX7 | Q99572 | 1/20 | 0.39 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.39 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30166530 | 0.90 | TSHR (0.41) | TSHRSMN1; SMN2PTGS2ALDH1A1HSD17B10 | |
| SCHEMBL392931 | 0.90 | TSHR (0.41) | TSHRSMN1; SMN2PTGS2ALDH1A1HSD17B10 | |
| SCHEMBL29700247 | 0.88 | ALDH1A1 (0.54) | TSHRSMN1; SMN2PTGS2ALDH1A1HSD17B10 | |
| Hydrochloric Acid SCHEMBL11760140 | 0.88 | PTGS2 (0.40) | TSHRSMN1; SMN2PTGS2ALDH1A1HSD17B10 | |
| SCHEMBL3042569 | 0.88 | ALDH1A1 (0.54) | TSHRSMN1; SMN2PTGS2ALDH1A1HSD17B10 | |
| SCHEMBL6768154 | 0.86 | DAPK1 (0.39) | TSHRSMN1; SMN2PTGS2ALDH1A1HSD17B10 | |
| SCHEMBL7053927 | 0.86 | CA12 (0.43) | TSHRSMN1; SMN2PTGS2ALDH1A1HSD17B10 | |
| SCHEMBL11437056 | 0.85 | PDCD1 (0.53) | TSHRSMN1; SMN2PTGS2ALDH1A1HSD17B10 | |
| Formaldehyde SCHEMBL5123936 | 0.85 | ALDH1A1 (0.50) | TSHRSMN1; SMN2PTGS2ALDH1A1HSD17B10 | |
| Urea SCHEMBL4970936 | 0.83 | BCAT2 (0.46) | TSHRSMN1; SMN2PTGS2HNF4ABCAT2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023162837-A1 | POSITIVE ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND COMPOUND | 富士フイルム株式会社 | 2023-08-31 | — | — | WO | disclosed |
| WO-2023162838-A1 | ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD | 富士フイルム株式会社 | 2023-08-31 | — | — | WO | disclosed |
| US-20230038825-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING PHOTOMASK | FUJIFILM CORPORATION (JP) | 2023-02-09 | — | — | US | disclosed |
| WO-2023008347-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE | 富士フイルム株式会社 | 2023-02-02 | — | — | WO | disclosed |
| US-20220206386-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2022-06-30 | — | — | US | disclosed |
| US-20210165325-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2021-06-03 | — | — | US | disclosed |
| WO-2020045534-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND | 富士フイルム株式会社 | 2020-03-05 | — | — | WO | disclosed |