Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.73 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.73 |
| ▸ | KCNA1 | Q09470 | 1/20 | 0.73 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.67 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.67 |
| ▸ | ATM | Q13315 | 1/20 | 0.67 |
| ▸ | DNM1 | Q05193 | 4/20 | 0.35 |
| ▸ | SLC22A1 | O15245 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetrylammonium SCHEMBL2861891 | 0.86 | TSHR (0.80) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL5484929 | 0.85 | TSHR (1.00) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL16267 | 0.85 | — | — | |
| Tetrylammonium SCHEMBL4078612 | 0.85 | TSHR (1.00) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL239864 | 0.82 | TSHR (0.73) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL11352843 | 0.82 | TSHR (0.73) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL9841037 | 0.81 | TSHR (0.57) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL23802209 | 0.80 | TSHR (0.89) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL333139 | 0.80 | TSHR (0.89) | TSHRNFKB1KCNA1KDM4EPMP22 | |
| Tetrylammonium SCHEMBL863 | 0.80 | TSHR (0.89) | TSHRNFKB1KCNA1KDM4EPMP22 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12628593-B2 | Method for treating transition metal semiconductor, and reducing agent-containing treatment liquid for transition metal oxide | TOKUYAMA CORPORATION (JP) | 2026-05-12 | — | — | US | disclosed |
| US-12509632-B2 | Treatment liquid for semiconductors and method for producing same | TOKUYAMA CORPORATION (JP) | 2025-12-30 | — | — | US | disclosed |
| CN-120060857-A | Treatment liquid for ruthenium semiconductor and method for producing same | 株式会社德山 | 2025-05-30 | — | — | CN | disclosed |
| US-12247299-B2 | Treatment liquid for semiconductor with ruthenium and method of producing the same | TOKUYAMA CORPORATION (JP) | 2025-03-11 | — | — | US | disclosed |
| CN-114466951-B | Treatment liquid for ruthenium semiconductor and method for producing same | 株式会社德山 | 2025-02-28 | — | — | CN | disclosed |
| US-20240087911-A1 | METHOD FOR TREATING TRANSITION METAL SEMICONDUCTOR, AND REDUCING AGENT-CONTAINING TREATMENT LIQUID FOR TRANSITION METAL OXIDE | TOKUYAMA CORPORATION (JP) | 2024-03-14 | — | — | US | disclosed |
| EP-4023791-B1 | SEMICONDUCTOR TREATMENT LIQUID FOR RUTHENIUM AND METHOD FOR PRODUCING SAME | TOKUYAMA CORP (JP) | 2023-10-11 | — | — | EP | disclosed |
| US-20230257887-A1 | TREATMENT LIQUID FOR SEMICONDUCTOR WITH RUTHENIUM AND METHOD OF PRODUCING THE SAME | TOKUYAMA CORPORATION (JP) | 2023-08-17 | — | — | US | disclosed |
| US-11674230-B2 | Treatment liquid for semiconductor with ruthenium and method of producing the same | TOKUYAMA CORPORATION (JP) | 2023-06-13 | — | — | US | disclosed |
| US-20230126771-A1 | TREATMENT LIQUID FOR SEMICONDUCTORS AND METHOD FOR PRODUCING SAME | TOKUYAMA CORPORATION (JP) | 2023-04-27 | — | — | US | disclosed |
| EP-4023791-A1 | SEMICONDUCTOR TREATMENT LIQUID FOR RUTHENIUM AND METHOD FOR PRODUCING SAME | Tokuyama Corporation (JP) | 2022-07-06 | — | — | EP | disclosed |
| WO-2022131186-A1 | METHOD FOR TREATING TRANSITION METAL SEMICONDUCTOR, AND REDUCING AGENT-CONTAINING TREATMENT LIQUID FOR TRANSITION METAL OXIDE | 株式会社トクヤマ | 2022-06-23 | — | — | WO | disclosed |
| CN-114466951-A | Ruthenium treating liquid for semiconductor and method for producing same | 株式会社德山 | 2022-05-10 | — | — | CN | disclosed |
| US-20210388508-A1 | TREATMENT LIQUID FOR SEMICONDUCTOR WITH RUTHENIUM AND METHOD OF PRODUCING THE SAME | TOKUYAMA CORPORATION (JP) | 2021-12-16 | — | — | US | disclosed |
| US-20210155878-A1 | QUATERNARY ALKYL AMMONIUM HYPOCHLORITE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD FOR PROCESSING SEMICONDUCTOR WAFERS | TOKUYAMA CORPORATION (JP) | 2021-05-27 | — | — | US | disclosed |
| EP-2215203-B1 | HIGH NEGATIVE ZETA POTENTIAL POLYHEDRAL SILSESQUIOXANE COMPOSITION AND METHOD FOR DAMAGE FREE SEMICONDUCTOR WET CLEAN | SACHEM INC (US) | 2012-05-16 | — | — | EP | disclosed |
| US-7976638-B2 | High negative zeta potential polyhedral silsesquioxane composition and method for damage free semiconductor wet clean | SACHEM, INC. (US) | 2011-07-12 | — | — | US | disclosed |
| EP-2215203-A1 | HIGH NEGATIVE ZETA POTENTIAL POLYHEDRAL SILSESQUIOXANE COMPOSITION AND METHOD FOR DAMAGE FREE SEMICONDUCTOR WET CLEAN | Sachem, Inc. (US) | 2010-08-11 | — | — | EP | disclosed |
| WO-2009064745-A1 | HIGH NEGATIVE ZETA POTENTIAL POLYHEDRAL SILSESQUIOXANE COMPOSITION AND METHOD FOR DAMAGE FREE SEMICONDUCTOR WET CLEAN | SACHEM, INC. (US) | 2009-05-22 | — | — | WO | disclosed |
| US-20090120458-A1 | HIGH NEGATIVE ZETA POTENTIAL POLYHEDRAL SILSESQUIOXANE COMPOSITION AND METHOD FOR DAMAGE FREE SEMICONDUCTOR WET CLEAN | SACHEM, INC. | 2009-05-14 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12628593-B2 | Method for treating transition metal semiconductor, and reducing agent-containing treatment liquid for transition metal oxide | CA6, CA3, SOST | TSHR 592/4885NFKB1 3237/4885KCNA1 561/4885 |
| US-12509632-B2 | Treatment liquid for semiconductors and method for producing same | GRIN2D, WIZ, EED | TSHR 869/4885NFKB1 4658/4885KCNA1 1986/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.